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BGY114B

NXP Semiconductors

BGY114B by NXP Semiconductors

BGY114B by NXP Semiconductors is a narrow band high-power RF amplifier with a gain of 37.8 dB, operating b/w 872 MHz and 905 MHz. It handles max input power of 4.77 dBm and operates in temperatures from -30 °C to 100 °C. Ideal for RF applications requiring robust performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,781 parts In-Stock

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3,781

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Vyrian

USA . 3,421 parts In-Stock

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3,421

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Anansix

USA . 481 parts In-Stock

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481

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One Stop Electronics

USA . 325 parts In-Stock

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$34.000

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325

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Corphita

USA . 4,111 parts In-Stock

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4,111

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UNI Independent Distributors

Spain . 2,765 parts In-Stock

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Northwest PG Solutions

USA . 2,129 parts In-Stock

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2,129

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Native Components

USA . 205 parts In-Stock

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Overview

Elevate your RF and microwave applications with the BGY114B from NXP Semiconductors—a leader in innovative technology. This high-power, narrow-band amplifier delivers exceptional performance in demanding environments, ensuring reliability even at extreme temperatures. With its robust design and impressive gain, the BGY114B guarantees superior signal quality, making it ideal for communication systems and more. Unlock unparalleled value and efficiency for your projects with NXP’s trusted expertise!

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

This high input power capability ensures that the amplifier can handle strong signals without distortion, making it suitable for demanding RF applications.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates good impedance matching, which minimizes reflected power, thereby enhancing efficiency and reliability in RF transmission.

Construction: COMPONENT

As a component type, this amplifier is easily integrated into various systems and applications, providing flexibility in design and implementation.

Maximum Operating Temperature: 100 °C

The ability to operate at high temperatures improves the amplifier's reliability in harsh environments, making it suitable for industrial and outdoor applications.

Minimum Operating Temperature: -30 °C

With a wide temperature range, this amplifier is capable of functioning in extreme cold, ensuring consistent performance in diverse conditions.

RF or Microwave Device Type: NARROW BAND HIGH POWER

The narrow band design allows for focused signal amplification, making it ideal for applications requiring high accuracy and low noise, such as communication systems.

Characteristic Impedance: 50 ohm

Having a standard impedance of 50 ohms allows for compatibility with most RF systems, reducing the need for additional matching networks.

Gain: 37.8 dB

A high gain of 37.8 dB ensures substantial amplification of the input signal, which is crucial for enhancing weak signals in communication applications.

Minimum Operating Frequency: 872 MHz

This frequency range makes the amplifier suitable for a variety of communication systems including mobile and wireless networks operating above 872 MHz.

Maximum Operating Frequency: 905 MHz

Operating up to 905 MHz allows the amplifier to effectively boost signals in this frequency range, making it ideal for specific RF applications requiring precision.

Technical Specifications

RF & Microwave Amplifiers BGY114B attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

37.8 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

905 MHz

Minimum Operating Frequency:

872 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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