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BGY110D

NXP Semiconductors

BGY110D by NXP Semiconductors

BGY110D by NXP Semiconductors is a narrow band medium power RF amplifier with a gain of 32.3 dB and operates b/w 824 MHz and 849 MHz. It handles max input power of 4.77 dBm and features a VSWR of 2, making it ideal for communication applications. With an operating temp up to 90 °C, it's reliable in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Digiode

USA . 3,870 parts In-Stock

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3,870

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Anansix

USA . 121 parts In-Stock

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GES GmbH

Germany . 50 parts In-Stock

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50

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Vyrian

USA . 39 parts In-Stock

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Q Components

USA . 3 parts In-Stock

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Native Components

USA . 463 parts In-Stock

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$1.870

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Northwest PG Solutions

USA . 2,282 parts In-Stock

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$2.057

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One Stop Electronics

USA . 1,558 parts In-Stock

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$22.000

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UNI Independent Distributors

Spain . 7,784 parts In-Stock

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Corphita

USA . 4,966 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Perfect Parts

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Overview

Elevate your RF and microwave applications with the BGY110D from NXP Semiconductors, a leader in high-performance technology. This narrow band medium power amplifier ensures superior gain and exceptional quality, making it ideal for communication systems where reliability is paramount. Experience enhanced signal clarity and efficiency, backed by NXP’s renowned expertise, to drive innovation in your projects effortlessly and effectively.

Feature Benefit Bullets

Maximum Input Power (CW): 4.77 dBm

This low maximum input power makes the amplifier ideal for applications where signal integrity is crucial, ensuring it can handle signals without distortion.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates good impedance matching, contributing to efficient power transfer and reduced signal reflection, which enhances overall system performance.

Construction: COMPONENT

The component construction type allows for easy integration into existing systems, making it a versatile choice for various RF and microwave applications.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, this amplifier is suitable for use in demanding environments, ensuring reliability under heat stress.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

This classification indicates optimized performance for specific frequency ranges, making it well-suited for applications requiring stable, narrowband amplification.

Characteristic Impedance: 50 ohm

A characteristic impedance of 50 ohms is the standard in RF applications, ensuring compatibility with most RF systems and reducing the need for additional matching components.

Gain: 32.3 dB

This high gain value allows for significant signal amplification, making it an excellent choice for boosting weak signals in RF communication systems.

Minimum Operating Frequency: 824 MHz

Starting from 824 MHz, this amplifier is suitable for cellular and other wireless communication applications in the specified frequency range.

Maximum Operating Frequency: 849 MHz

The upper operating frequency of 849 MHz makes this amplifier perfect for precise frequency band applications, ensuring effective signal processing within this narrow range.

Technical Specifications

RF & Microwave Amplifiers BGY110D attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

32.3 dB

Maximum Input Power (CW):

4.77 dBm

Maximum Operating Frequency:

849 MHz

Minimum Operating Frequency:

824 MHz

Maximum Operating Temperature:

90 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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