Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BGY113F by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 35.5 dB, operating b/w 430 MHz and 470 MHz. It supports max input power of 7 dBm and withstands temperatures from -30 °C to 90 °C. Ideal for RF applications requiring robust performance.
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The ability to handle a maximum input power of 7 dBm makes this amplifier suitable for applications that require moderate power levels, ensuring reliable performance in RF and microwave systems.
A maximum VSWR of 2 indicates good impedance matching, minimizing signal reflections which improves overall system efficiency and reduces potential damage.
Designed as a component, this amplifier can be easily integrated into various systems, providing flexibility in component selection for RF and microwave applications.
With a high maximum operating temperature of 90 °C, this amplifier is suitable for use in demanding environments without overheating issues.
A wide temperature range that starts at -30 °C ensures reliable performance in extreme cold climates, making this device versatile for various outdoor applications.
Being a narrow band high power amplifier, the device excels in specific frequency ranges, suitable for applications requiring precision and enhanced signal quality.
The standard 50 ohm characteristic impedance allows for compatibility with most RF systems, facilitating seamless integration into existing setups.
A gain of 35.5 dB signifies the amplifier's capability to significantly boost signal strength, essential for long-distance communication and improving overall system performance.
The minimum operating frequency of 430 MHz makes this amplifier ideal for applications in the UHF range, ensuring suitability for various RF communication systems.
With a maximum operating frequency of 470 MHz, this amplifier can effectively support a range of communication protocols, enhancing its usability across different applications.
RF & Microwave Amplifiers BGY113F attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors
Characteristic Impedance:
Construction:
Gain:
Maximum Input Power (CW):
Maximum Operating Frequency:
Minimum Operating Frequency:
Maximum Operating Temperature:
Minimum Operating Temperature:
RF or Microwave Device Type:
Maximum Voltage Standing Wave Ratio:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
PIC18F4550-I/PT
Microchip Technology
PIC18F4550-I/PT by Microchip: 8-bit microcontroller with 44 terminals, 48 MHz clock frequency, and USB connectivity. Ideal for industrial applications requiring low power mode and 10-bit ADC channels.
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
MICRODIODE ELECTRONICS SHENZHEN CO LTD
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
1N4148WS
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CGA3E2X7R1H104K080AA
TDK
CGA3E2X7R1H104K080AA by TDK is a fixed ceramic capacitor with a capacitance of 0.1 uF and a rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate at temperatures ranging from -55 to 125 °C. This capacitor is commonly used in surface mount applications for various electronic devices.
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
Eic Semiconductor
Daco Semiconductor
LM555CM
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
ULN2803A
STMicroelectronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
HMC506LP4ETR
Hittite Microwave
NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
HMC455LP3
NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;
HMC751LC4TR
Analog Devices
HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.
TGA2567-SM
Triquint Semiconductor
WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 2000 MHz; Maximum Operating Frequency: 20000 MHz; Gain: 17 dB; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel;
MMG3014NT1
Freescale Semiconductor
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
HMC429LP4E
NARROW BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT;
NBB-300-T1
Qorvo
Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.
AM-147-PIN
Tyco Electronics M/a-com
WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;
TGA2237-SM
WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
SMA70-2
M/a-com Technology Solutions
WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;
HMC863ALC4TR-R5
Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
SGA-2463Z
Sirenza Microdevices
SGA-2463Z by Sirenza Microdevices is a wide band low power RF amplifier with a gain of 17.1 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
BGU8007,115
NXP Semiconductors
NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.
RA07N4047M-101
Mitsubishi Electric
RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.
MAX2659ELT/V+
Analog Devices' MAX2659ELT/V+ is a BICMOS RF amplifier with 16.5 dB gain and 50 ohm impedance. It operates at temperatures from -40 to 85 °C, with a max input power of 10 dBm. Ideal for narrow band low power applications, it has a compact surface mount package with 6 terminals.
RF3827
Rf Micro Devices
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 8;
HMC549MS8G
HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.
TGA2526
TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.
HMC465LP5ETR
WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
XL1000-BD-000V
Mimix Broadband
WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;
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BGY114B
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 100 Cel; Gain: 37.8 dB; Construction: COMPONENT;
BGY112C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 146 MHz; Construction: MODULE; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 174 MHz;
BGY110D
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 824 MHz; Maximum Input Power (CW): 4.77 dBm; Gain: 32.3 dB;
BGY113G
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Input Power (CW): 7 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 470 MHz; Maximum Operating Frequency: 520 MHz;
BGY113B
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Gain: 38.5 dB; Maximum Operating Frequency: 470 MHz; Maximum Input Power (CW): 7 dBm;
BGY112A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 88 MHz; Maximum Input Power (CW): 3 dBm; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2;
BGY114C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 890 MHz; Maximum Operating Temperature: 100 Cel; Maximum Operating Frequency: 915 MHz; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;
BGY1085A,112
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 240 mA; Maximum Operating Temperature: 100 Cel;
BGY113A
NARROW BAND HIGH POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Input Power (CW): 7 dBm;
BGY110E
NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Gain: 32.3 dB; Maximum Operating Frequency: 905 MHz;
BGY113C
NARROW BAND HIGH POWER; Maximum Operating Frequency: 520 MHz; Maximum Operating Temperature: 90 Cel; Characteristic Impedance: 50 ohm; Gain: 38.5 dB; Maximum Input Power (CW): 7 dBm;
BGY110G
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 928 MHz; Construction: COMPONENT; Maximum Input Power (CW): 4.77 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 902 MHz;
BGY114A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;
BGY110B
NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 50; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 90 Cel;
BGY112B
NARROW BAND HIGH POWER; Maximum Operating Frequency: 156 MHz; Maximum Input Power (CW): 3 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 90 Cel; Minimum Operating Frequency: 132 MHz;
BGY1085A
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Power Supplies (V): 24; Package Equivalence Code: SOT-115J;
BGY110A
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Construction: MODULE; Minimum Operating Frequency: 824 MHz;
BGY110F
NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 4.77 dBm; Minimum Operating Frequency: 890 MHz; Maximum Voltage Standing Wave Ratio: 2; Gain: 32.3 dB;
BGY113E
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; Maximum Input Power (CW): 7 dBm; Maximum Operating Temperature: 90 Cel;
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