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BGY113F

NXP Semiconductors

BGY113F by NXP Semiconductors

BGY113F by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 35.5 dB, operating b/w 430 MHz and 470 MHz. It supports max input power of 7 dBm and withstands temperatures from -30 °C to 90 °C. Ideal for RF applications requiring robust performance.

Median Price

$195.114

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 5 parts In-Stock

1+ parts

$195.114

100+ parts

$204.870

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$193.163

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5

$195.114

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Digiode

USA . 3,833 parts In-Stock

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Vyrian

USA . 2,968 parts In-Stock

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Anansix

USA . 1,858 parts In-Stock

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1,858

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One Stop Electronics

USA . 1,433 parts In-Stock

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$23.000

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UNI Independent Distributors

Spain . 3,008 parts In-Stock

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Corphita

USA . 1,437 parts In-Stock

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Native Components

USA . 620 parts In-Stock

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Northwest PG Solutions

USA . 56 parts In-Stock

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Overview

Unlock exceptional performance with the BGY113F from NXP Semiconductors, a leader in innovative RF & Microwave solutions. This narrow-band high-power amplifier delivers unmatched quality and reliability for diverse applications, including telecommunications and broadcasting. With its robust design catering to extreme temperatures and superior gain, customers benefit from enhanced signal strength and operational efficiency, ensuring seamless connectivity in every environment. Elevate your projects with NXP's trusted expertise!

Feature Benefit Bullets

Maximum Input Power (CW): 7 dBm

The ability to handle a maximum input power of 7 dBm makes this amplifier suitable for applications that require moderate power levels, ensuring reliable performance in RF and microwave systems.

Maximum Voltage Standing Wave Ratio: 2

A maximum VSWR of 2 indicates good impedance matching, minimizing signal reflections which improves overall system efficiency and reduces potential damage.

Construction: COMPONENT

Designed as a component, this amplifier can be easily integrated into various systems, providing flexibility in component selection for RF and microwave applications.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature of 90 °C, this amplifier is suitable for use in demanding environments without overheating issues.

Minimum Operating Temperature: -30 °C

A wide temperature range that starts at -30 °C ensures reliable performance in extreme cold climates, making this device versatile for various outdoor applications.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power amplifier, the device excels in specific frequency ranges, suitable for applications requiring precision and enhanced signal quality.

Characteristic Impedance: 50 ohm

The standard 50 ohm characteristic impedance allows for compatibility with most RF systems, facilitating seamless integration into existing setups.

Gain: 35.5 dB

A gain of 35.5 dB signifies the amplifier's capability to significantly boost signal strength, essential for long-distance communication and improving overall system performance.

Minimum Operating Frequency: 430 MHz

The minimum operating frequency of 430 MHz makes this amplifier ideal for applications in the UHF range, ensuring suitability for various RF communication systems.

Maximum Operating Frequency: 470 MHz

With a maximum operating frequency of 470 MHz, this amplifier can effectively support a range of communication protocols, enhancing its usability across different applications.

Technical Specifications

RF & Microwave Amplifiers BGY113F attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

35.5 dB

Maximum Input Power (CW):

7 dBm

Maximum Operating Frequency:

470 MHz

Minimum Operating Frequency:

430 MHz

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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