Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BGY113F by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 35.5 dB, operating b/w 430 MHz and 470 MHz. It supports max input power of 7 dBm and withstands temperatures from -30 °C to 90 °C. Ideal for RF applications requiring robust performance.
Median Price
$195.114
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4
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1k+
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1+ parts
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$204.870
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$193.163
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Digiode
Vyrian
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One Stop Electronics
$23.000
UNI Independent Distributors
Corphita
Native Components
Northwest PG Solutions
The ability to handle a maximum input power of 7 dBm makes this amplifier suitable for applications that require moderate power levels, ensuring reliable performance in RF and microwave systems.
A maximum VSWR of 2 indicates good impedance matching, minimizing signal reflections which improves overall system efficiency and reduces potential damage.
Designed as a component, this amplifier can be easily integrated into various systems, providing flexibility in component selection for RF and microwave applications.
With a high maximum operating temperature of 90 °C, this amplifier is suitable for use in demanding environments without overheating issues.
A wide temperature range that starts at -30 °C ensures reliable performance in extreme cold climates, making this device versatile for various outdoor applications.
Being a narrow band high power amplifier, the device excels in specific frequency ranges, suitable for applications requiring precision and enhanced signal quality.
The standard 50 ohm characteristic impedance allows for compatibility with most RF systems, facilitating seamless integration into existing setups.
A gain of 35.5 dB signifies the amplifier's capability to significantly boost signal strength, essential for long-distance communication and improving overall system performance.
The minimum operating frequency of 430 MHz makes this amplifier ideal for applications in the UHF range, ensuring suitability for various RF communication systems.
With a maximum operating frequency of 470 MHz, this amplifier can effectively support a range of communication protocols, enhancing its usability across different applications.
RF & Microwave Amplifiers BGY113F attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors
Characteristic Impedance:
Construction:
Gain:
Maximum Input Power (CW):
Maximum Operating Frequency:
Minimum Operating Frequency:
Maximum Operating Temperature:
Minimum Operating Temperature:
RF or Microwave Device Type:
Maximum Voltage Standing Wave Ratio:
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LL4148
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
CRCW04020000Z0EDHP
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0EDHP is a 0402 SMT resistor with 0 ohm resistance, rated for temperatures from -55°C to 155°C. Ideal for jumper applications in automotive electronics due to AEC-Q200 compliance and compact size of 1mm x 0.5mm x 0.3mm.
2N7002
Silicon Standard
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
BSS138K-13
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
BAV99
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
BAV99W-7-F
Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
SMBJ18CA
Alpha & Omega Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
STMicroelectronics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Kec
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
MAX2839ETN+T
Maxim Integrated
NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
MGA-61563-TR2G
Broadcom
Broadcom's MGA-61563-TR2G is a GAAS RF amplifier with 6.9dB gain, operating from 100MHz to 6GHz. It has a max input power of 18dBm and VSWR of 2, suitable for wideband low-power applications. This surface-mount component with matte tin finish offers high performance in RF and microwave systems.
MMG15241HT1
NXP Semiconductors
The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.
ERA-50SM+
Mini-circuits
ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.
HMC963LC4TR-R5
Analog Devices
Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.
MGA-81563-TR1
Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.
AMMP-6220-TR1
AMMP-6220-TR1 by Broadcom is a wide band low power RF amplifier with 22 dB gain, operating frequency range of 6-20 GHz. It features a max input power of 15 dBm and requires a 3V power supply. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
XP1050-QJ-0G0T
M/a-com Technology Solutions
XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
BLM7G1822S-20PBGY
RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;
RF3827SR
Qorvo
Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.
SBF4089ZSR
Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.
Agilent Technologies
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;
AG302-86G
Triquint Semiconductor
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC326MS8GE
Hittite Microwave
WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4500 MHz;
ADA-4643-BLKG
WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
HMC392ALC4
HMC392ALC4 by Analog Devices is a RF & Microwave Amplifier with 20 dBm CW input power, 14.5 dB gain, and 3500-8000 MHz frequency range. It operates at temperatures from -40 to 85°C and requires a 5V power supply. Ideal for wideband low-power applications due to its GaAs technology and surface mounting feature.
HMC565LC5
Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
HMC478SC70ETR
WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;
RA35H1516M
Mitsubishi Electric
Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
AG303-86G
The Qorvo AG303-86G is a wide band low power RF amplifier with 20.4 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF applications requiring high gain in the -40°C to 85°C temperature range.
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BGY114B
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 100 Cel; Gain: 37.8 dB; Construction: COMPONENT;
BGY112C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 146 MHz; Construction: MODULE; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 174 MHz;
BGY110D
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 824 MHz; Maximum Input Power (CW): 4.77 dBm; Gain: 32.3 dB;
BGY113G
NARROW BAND HIGH POWER; Minimum Operating Temperature: -30 Cel; Maximum Input Power (CW): 7 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 470 MHz; Maximum Operating Frequency: 520 MHz;
BGY113B
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Gain: 38.5 dB; Maximum Operating Frequency: 470 MHz; Maximum Input Power (CW): 7 dBm;
BGY112A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 88 MHz; Maximum Input Power (CW): 3 dBm; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2;
BGY114C
NARROW BAND HIGH POWER; Minimum Operating Frequency: 890 MHz; Maximum Operating Temperature: 100 Cel; Maximum Operating Frequency: 915 MHz; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;
BGY1085A,112
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: SOT-115J; Maximum Supply Current: 240 mA; Maximum Operating Temperature: 100 Cel;
BGY113A
NARROW BAND HIGH POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Input Power (CW): 7 dBm;
BGY110E
NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 90 Cel; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Gain: 32.3 dB; Maximum Operating Frequency: 905 MHz;
BGY113C
NARROW BAND HIGH POWER; Maximum Operating Frequency: 520 MHz; Maximum Operating Temperature: 90 Cel; Characteristic Impedance: 50 ohm; Gain: 38.5 dB; Maximum Input Power (CW): 7 dBm;
BGY110G
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 928 MHz; Construction: COMPONENT; Maximum Input Power (CW): 4.77 dBm; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 902 MHz;
BGY114A
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;
BGY110B
NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 50; Maximum Input Power (CW): 3 dBm; Maximum Operating Frequency: 905 MHz; Maximum Operating Temperature: 90 Cel;
BGY112B
NARROW BAND HIGH POWER; Maximum Operating Frequency: 156 MHz; Maximum Input Power (CW): 3 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 90 Cel; Minimum Operating Frequency: 132 MHz;
BGY1085A
WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Power Supplies (V): 24; Package Equivalence Code: SOT-115J;
BGY110A
NARROW BAND MEDIUM POWER; Maximum Operating Frequency: 849 MHz; Maximum Operating Temperature: 90 Cel; Maximum Input Power (CW): 3 dBm; Construction: MODULE; Minimum Operating Frequency: 824 MHz;
BGY110F
NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 4.77 dBm; Minimum Operating Frequency: 890 MHz; Maximum Voltage Standing Wave Ratio: 2; Gain: 32.3 dB;
BGY113E
NARROW BAND HIGH POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Frequency: 400 MHz; Maximum Input Power (CW): 7 dBm; Maximum Operating Temperature: 90 Cel;
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