Loading...

BGY113G

NXP Semiconductors

BGY113G by NXP Semiconductors

BGY113G by NXP Semiconductors is a narrow band high power RF amplifier with a gain of 35.5 dB and operates b/w 470 MHz to 520 MHz. It supports max input power of 7 dBm and withstands temperatures from -30 °C to 90 °C. Ideal for RF applications in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,926 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,926

-

-

-

-

Vyrian

USA . 2,777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,777

-

-

-

-

Anansix

USA . 2,286 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,286

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 466 parts In-Stock

1+ parts

$1.870

100+ parts

-

1k+ parts

-

10k+ parts

-

466

$1.870

-

-

-

Northwest PG Solutions

USA . 334 parts In-Stock

1+ parts

$2.057

100+ parts

-

1k+ parts

-

10k+ parts

-

334

$2.057

-

-

-

One Stop Electronics

USA . 730 parts In-Stock

1+ parts

$13.000

100+ parts

-

1k+ parts

-

10k+ parts

-

730

$13.000

-

-

-

UNI Independent Distributors

Spain . 3,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,570

-

-

-

-

Corphita

USA . 2,067 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

-

-

-

-

Overview

Elevate your RF applications with the BGY113G from NXP Semiconductors, a trusted leader in innovation. Designed for narrow-band high-power performance, this amplifier ensures superior signal integrity and reliability across various environments. With its robust construction and impressive gain, it excels in communications, broadcasting, and industrial uses. Experience unmatched efficiency and peace of mind with NXP's quality, tailored to enhance your projects' success.

Feature Benefit Bullets

Maximum Input Power (CW): 7 dBm

This amplifier can handle relatively strong input signals without distortion, making it suitable for various RF applications.

Maximum Voltage Standing Wave Ratio: 2

A VSWR of 2 indicates good impedance matching, which minimizes reflections and enhances overall system efficiency.

Construction: COMPONENT

Designed as a component, this amplifier can be easily integrated into existing systems or setups, providing versatility in application.

Maximum Operating Temperature: 90 °C

With a high maximum operating temperature, this amplifier remains reliable even in demanding environments, ensuring stable performance.

Minimum Operating Temperature: -30 °C

Its capability to operate at low temperatures expands its usability in diverse conditions, including outdoor and unheated environments.

RF or Microwave Device Type: NARROW BAND HIGH POWER

The narrowband design optimizes performance for specific frequency ranges, enhancing signal fidelity and efficiency in targeted applications.

Characteristic Impedance: 50 ohm

This standard impedance ensures compatibility with most RF and microwave systems, facilitating easier integration and system design.

Gain: 35.5 dB

A gain of 35.5 dB provides significant amplification, enabling the effective transmission of signals over longer distances.

Minimum Operating Frequency: 470 MHz

The ability to operate from 470 MHz allows for applications in various communication and broadcasting services.

Maximum Operating Frequency: 520 MHz

With a maximum frequency of 520 MHz, this amplifier caters well to narrow band applications, ensuring efficient performance across its range.

Technical Specifications

RF & Microwave Amplifiers BGY113G attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

35.5 dB

Maximum Input Power (CW):

7 dBm

Maximum Operating Frequency:

520 MHz

Minimum Operating Frequency:

470 MHz

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-30 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19