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BC879-AMMO

NXP Semiconductors

BC879-AMMO by NXP Semiconductors

BC879-AMMO by NXP is a high-performance NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

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Lifecycle Status

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3

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1k+

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Digiode

USA . 2,273 parts In-Stock

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Anansix

USA . 1,582 parts In-Stock

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Vyrian

USA . 669 parts In-Stock

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One Stop Electronics

USA . 1,103 parts In-Stock

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$6.050

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Native Components

USA . 220 parts In-Stock

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$22.514

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Northwest PG Solutions

USA . 38 parts In-Stock

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$24.765

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$22.288

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$22.288

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UNI Independent Distributors

Spain . 1,268 parts In-Stock

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Corphita

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Overview

Unlock unparalleled performance with the BC879-AMMO from NXP Semiconductors, a trusted leader in advanced semiconductor solutions. This high-quality Darlington transistor delivers exceptional gain and efficiency, making it ideal for all your switching applications. With its robust design and reliable operation at elevated temperatures, the BC879-AMMO empowers your projects to perform flawlessly, ensuring durability and precision across various electronic applications. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection against environmental stressors, making this transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, providing versatility in switching and amplification applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration allows for higher current gain and efficiency while the built-in diode and resistor simplify circuit design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures fast response times and is ideal for driving loads effectively.

Maximum VCEsat: 1.8 V

A low VCEsat enhances the energy efficiency and reduces power loss in switching applications, making it suitable for battery-operated devices.

Package Shape: ROUND

The round package shape provides efficient heat dissipation and simplifies integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers robust mechanical stability during assembly and is ideal for soldering in prototyping and production.

No. of Terminals: 3

With three terminals, this transistor supports a simple connection for effective operation in various circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for compact assembly and efficient usage of space in electronic devices.

Minimum DC Current Gain (hFE): 2000

A high hFE value indicates excellent amplification capabilities, making this transistor a powerful choice for signal processing.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance in extreme conditions, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 80 V

A high collector-emitter voltage rating allows this transistor to handle significant loads, making it versatile for various high-voltage applications.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical characteristics and reliability in a wide range of applications.

Maximum Collector Current (IC): 1 A

The ability to handle up to 1 A of collector current makes this transistor suitable for driving motors and other high-current devices.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easy integration into circuits and PCBs, improving layout flexibility.

Nominal Transition Frequency (fT): 200 MHz

A high transition frequency ensures good performance in high-frequency applications, making it advantageous for RF and communication devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC879-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC879-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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