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BC875-AMMO

NXP Semiconductors

BC875-AMMO by NXP Semiconductors

BC875-AMMO by NXP Semiconductors is a high-performance NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package ensures efficient thermal management in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,882 parts In-Stock

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Digiode

USA . 2,594 parts In-Stock

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2,594

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Anansix

USA . 330 parts In-Stock

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330

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Native Components

USA . 122 parts In-Stock

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$30.485

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$29.266

122

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One Stop Electronics

USA . 763 parts In-Stock

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$31.050

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763

$31.050

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Northwest PG Solutions

USA . 1,123 parts In-Stock

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$33.534

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$33.534

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UNI Independent Distributors

Spain . 5,977 parts In-Stock

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Corphita

USA . 2,519 parts In-Stock

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2,519

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Overview

Elevate your electronic designs with the BC875-AMMO from NXP Semiconductors, a leader in innovation and quality. This high-performance NPN Darlington transistor is ideal for efficient switching applications, delivering unmatched reliability and exceptional current gain. With its robust construction and versatile design, it thrives in demanding environments, ensuring longevity and optimal performance. Choose BC875-AMMO to power your projects with confidence and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and reliability under various environmental conditions, making the transistor suitable for diverse applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in electronic circuits for amplification and switching, providing versatility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, making this product ideal for applications requiring efficient switching and amplification with minimal external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast response times and efficiency in controlling power within circuits.

Maximum VCEsat: 1.8 V

A relatively low saturation voltage indicates efficient operation and minimal power loss during switching, contributing to better overall energy efficiency.

Package Shape: ROUND

The round package shape offers a compact design, allowing for space-efficient layouts in electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy mounting and handling, ensuring reliable electrical connections and mechanical stability.

No. of Terminals: 3

With three terminals, this transistor is straightforward to implement in circuits while providing the necessary connectivity for its operations.

Package Style (Meter): CYLINDRICAL

A cylindrical package style is both space-efficient and conducive to effective heat dissipation, enhancing the longevity and performance of the transistor.

Minimum DC Current Gain (hFE): 2000

With a high current gain, this transistor can amplify small input signals effectively, making it suitable for low-power signal processing applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures allows this transistor to be used in demanding environments, increasing its application range.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45 V ensures compatibility with a wide range of voltage applications, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its excellent electrical properties, ensuring reliable performance and efficiency.

Maximum Collector Current (IC): 1 A

A maximum collector current rating of 1 A indicates sufficient capacity for driving various loads, making this transistor versatile for different applications.

Terminal Position: BOTTOM

Bottom terminal positioning can assist in better circuit board layout and heat dissipation, enhancing overall performance and reliability.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency of 200 MHz allows for rapid switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC875-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC875-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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