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BC875-T/R

NXP Semiconductors

BC875-T/R by NXP Semiconductors

BC875-T/R by NXP Semiconductors is a high-performance NPN Darlington transistor designed for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Ideal for efficient signal amplification in compact electronic devices.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,869 parts In-Stock

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4,869

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Digiode

USA . 784 parts In-Stock

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784

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Anansix

USA . 244 parts In-Stock

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244

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Native Components

USA . 487 parts In-Stock

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$26.020

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487

$26.020

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Northwest PG Solutions

USA . 672 parts In-Stock

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$28.622

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$25.760

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672

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One Stop Electronics

USA . 678 parts In-Stock

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$48.050

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678

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UNI Independent Distributors

Spain . 1,760 parts In-Stock

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1,760

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Corphita

USA . 987 parts In-Stock

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Overview

Elevate your electronic designs with the BC875-T/R from NXP Semiconductors, a trusted leader in innovation. This NPN Darlington transistor seamlessly integrates performance and reliability, boasting a remarkable 2000 DC current gain for efficient switching applications. Its compact, cylindrical package and robust plastic-epoxy construction ensure durability, making it ideal for a wide range of environments. Experience exceptional quality and superior functionality that only NXP can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

An NPN configuration is ideal for high-speed switching applications, providing better performance in common circuit configurations.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor enhances current gain and simplifies circuit design, reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and high efficiency in digital and power applications.

Maximum VCEsat: 1.8 V

A low maximum VCEsat indicates minimal voltage drop across the transistor when in saturation, contributing to improved efficiency and thermal performance.

Package Shape: ROUND

The round package shape allows for efficient heat dissipation, which contributes to the long-term reliability of the device.

Terminal Form: THROUGH-HOLE

The through-hole terminal configuration provides robust mechanical stability, making it suitable for PCB applications.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into various circuit configurations, enhancing versatility.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient space usage on PCB layouts, helpful in compact electronic designs.

Minimum DC Current Gain (hFE): 2000

A high minimum DC current gain indicates excellent amplification capabilities, allowing for effective signal processing in applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enhances reliability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45 V, this transistor can handle a range of voltage applications, making it versatile.

Transistor Element Material: SILICON

Silicon is known for its excellent thermal and electrical properties, providing efficient performance across a wide range of applications.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A allows for the control of significant power loads, suitable for various switching tasks.

Terminal Position: BOTTOM

Bottom terminal positioning aids in space-saving designs and can improve thermal management in layouts.

Nominal Transition Frequency (fT): 200 MHz

A nominal transition frequency of 200 MHz supports high-frequency applications, making it suitable for RF and fast switching circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC875-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC875-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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