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BC877-AMMO

NXP Semiconductors

BC877-AMMO by NXP Semiconductors

BC877-AMMO by NXP Semiconductors is a high-performance NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package and through-hole design ensure easy integration in various circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,373 parts In-Stock

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Digiode

USA . 3,002 parts In-Stock

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Anansix

USA . 578 parts In-Stock

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Native Components

USA . 363 parts In-Stock

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$14.302

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363

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Northwest PG Solutions

USA . 2,240 parts In-Stock

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$15.733

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$14.159

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One Stop Electronics

USA . 1,484 parts In-Stock

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$50.050

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UNI Independent Distributors

Spain . 6,997 parts In-Stock

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6,997

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Corphita

USA . 899 parts In-Stock

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899

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Overview

Unlock the power of reliable performance with the BC877-AMMO from NXP Semiconductors. This exceptional small signal transistor is engineered for seamless switching applications, delivering unmatched efficiency and durability. With NXP's reputation for quality and innovation, you can trust that the BC877-AMMO will elevate your projects, ensuring optimal operation even in challenging environments. Experience enhanced functionality and value, making it the ideal choice for any electronic design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and resistance to environmental stress, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient amplification and switching, making it ideal for various electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration ensures high current gain, while the built-in diode and resistor simplify circuit design and improve reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable on/off control in digital circuits.

Maximum VCEsat: 1.8 V

A low VCEsat value means more efficient operation with minimal power loss during switching, enhancing overall performance.

Package Shape: ROUND

The round package shape provides spatial advantages in PCB designs, ensuring versatile placement options.

Terminal Form: THROUGH-HOLE

Through-hole terminals allow for strong mechanical connections and are easy to solder, ensuring robust assembly.

No. of Terminals: 3

With three terminals, this transistor maintains a compact design while providing necessary connections for efficient operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is conducive for thermal management and can be advantageous for specific mounting scenarios.

Minimum DC Current Gain (hFE): 2000

A high hFE value indicates excellent amplification capabilities, making this transistor suitable for low-signal applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating allows this transistor to function in demanding environments, increasing its applicability.

Maximum Collector-Emitter Voltage: 60 V

A maximum voltage rating of 60 V makes it capable of handling a wide range of applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a widely used material in transistors, providing excellent electrical properties and reliability in performance.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, the transistor can effectively handle moderate loads, expanding its use cases.

Terminal Position: BOTTOM

Bottom terminal positioning can facilitate a more compact layout on PCBs, optimizing space utilization.

Nominal Transition Frequency (fT): 200 MHz

A high transition frequency improves the transistor's performance in high-speed applications, crucial for modern electronics.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC877-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC877-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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