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BC879

NXP Semiconductors

BC879 by NXP Semiconductors

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

Median Price

$1.853

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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EXC GmbH

Germany . 295 parts In-Stock

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$1.853

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Digiode

USA . 1,890 parts In-Stock

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Anansix

USA . 1,385 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 384 parts In-Stock

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Huijzer Components

Netherlands . 150 parts In-Stock

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Manotoh

Italy . 71 parts In-Stock

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Vyrian

USA . 47 parts In-Stock

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Cogito LLC

Ukraine . 10 parts In-Stock

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Donberg Electronics Ltd

Ireland . 9 parts In-Stock

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GES GmbH

Germany . 7 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 119 parts In-Stock

1+ parts

$1.597

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$1.533

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$1.469

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Northwest PG Solutions

USA . 1,949 parts In-Stock

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$3.466

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One Stop Electronics

USA . 1,620 parts In-Stock

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$20.050

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Andel Nordic

Denmark . 2,449 parts In-Stock

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$27.290

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$19.100

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$19.100

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Corphita

USA . 4,399 parts In-Stock

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Native Components

USA . 1,254 parts In-Stock

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UNI Independent Distributors

Spain . 884 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 30 parts In-Stock

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC879 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC879 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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