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BC879-T/R

NXP Semiconductors

BC879-T/R by NXP Semiconductors

BC879-T/R by NXP is an NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,661 parts In-Stock

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Anansix

USA . 2,215 parts In-Stock

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Digiode

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One Stop Electronics

USA . 1,284 parts In-Stock

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Corphita

USA . 4,215 parts In-Stock

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UNI Independent Distributors

Spain . 3,867 parts In-Stock

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Northwest PG Solutions

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Native Components

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Overview

Unlock the potential of your electronic designs with the BC879-T/R from NXP Semiconductors, a leading name in quality and innovation. This high-performance Darlington transistor combines exceptional efficiency with robust reliability, making it ideal for switching applications across various industries. With superior gain and thermal stability, you can trust the BC879-T/R to enhance performance while simplifying your design process. Experience the value of NXP's expertise and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in electronic circuits for switching and amplification, providing versatility in design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

This configuration offers high gain and improved performance for applications requiring efficient switching capabilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides rapid response times and efficient operation.

Maximum VCEsat: 1.8 V

A low VCE(sat) contributes to efficient operation, reducing power loss during switching and enhancing overall performance.

Package Shape: ROUND

The round shape allows for easy integration into various circuit designs and ensures reliable fitment in assemblies.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust physical connection and is ideal for applications requiring durability and stability.

No. of Terminals: 3

Having three terminals simplifies circuit design while allowing for versatile connections in applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style optimizes space and enables efficient thermal management while maintaining ease of handling.

Minimum DC Current Gain (hFE): 2000

A very high hFE allows for amplification of small input signals, making it suitable for diverse applications.

Maximum Operating Temperature: 150 °C

This high maximum operating temperature ensures reliability and performance in demanding environments.

Maximum Collector-Emitter Voltage: 80 V

A high collector-emitter voltage rating makes this transistor suitable for higher voltage applications, enhancing versatility.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and is commonly used in semiconductor devices for optimal performance.

Maximum Collector Current (IC): 1 A

The ability to handle up to 1 A of collector current makes this transistor suitable for power applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for efficient space utilization in PCB designs, facilitating compact layouts.

Nominal Transition Frequency (fT): 200 MHz

A high transition frequency allows for high-speed switching capabilities, making it ideal for fast electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC879-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC879-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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