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BC878-T/R

NXP Semiconductors

BC878-T/R by NXP Semiconductors

BC878-T/R by NXP Semiconductors is a PNP Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its compact cylindrical package ensures efficient performance in various electronic circuits.

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1k+

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Digiode

USA . 3,567 parts In-Stock

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Anansix

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One Stop Electronics

USA . 1,047 parts In-Stock

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Corphita

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UNI Independent Distributors

Spain . 1,925 parts In-Stock

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Northwest PG Solutions

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Overview

Elevate your circuit designs with the BC878-T/R from NXP Semiconductors, a leader in innovation and quality. This PNP Darlington transistor combines exceptional switching capabilities with minimal power loss, making it perfect for demanding applications. With robust performance in extreme temperatures and a compact form factor, the BC878-T/R is your go-to solution for efficiency and reliability, empowering your projects to achieve greatness. Choose NXP for unmatched quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package provides excellent durability and resistance to environmental stresses, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into various circuits, particularly in applications where positive voltage switching is needed.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

This configuration enhances current gain and improves performance, making it ideal for applications requiring high amplification.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures efficient control of electrical signals in a variety of electronic circuits.

Maximum VCEsat: 1.8 V

A low VCEsat indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency in switching applications.

Package Shape: ROUND

The round package shape helps in better thermal management and reduces space constraints on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures sturdy mounting and reliable electrical connections, particularly in high-stress environments.

No. of Terminals: 3

With three terminals, this transistor supports versatile circuit designs while providing essential performance characteristics.

Package Style (Meter): CYLINDRICAL

Cylindrical package style helps in efficient PCB layout design and enhances thermal performance for the device.

Minimum DC Current Gain (hFE): 2000

A high minimum DC current gain allows for effective amplification of low-level signals, making it a preferred choice for signal processing.

Maximum Operating Temperature: 150 °C

Operating at high temperatures ensures reliability in demanding environments, suitable for both industrial and consumer applications.

Maximum Collector-Emitter Voltage: 60 V

A maximum collector-emitter voltage of 60 V allows this transistor to be used in a wide variety of power applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, ensuring good performance, availability, and compatibility with various electronics.

Maximum Turn On Time (ton): 500 ns

Fast turn-on time makes this transistor suitable for high-speed switching applications where quick response is essential.

Maximum Collector Current (IC): 1 A

A collector current rating of 1 A allows for significant load driving capability in various applications.

Maximum Turn Off Time (toff): 700 ns

With a maximum turn-off time of 700 ns, this transistor ensures efficient operation in timing-critical applications.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies PCB layout and allows for better thermal dissipation.

Nominal Transition Frequency (fT): 200 MHz

A nominal transition frequency of 200 MHz indicates suitability for RF applications and high-frequency signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC878-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

700 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

1.8 V

Trade Compliance

BC878-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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