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BC876-T/R

NXP Semiconductors

BC876-T/R by NXP Semiconductors

BC876-T/R by NXP Semiconductors is a PNP Darlington transistor designed for efficient switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Ideal for compact circuits with its cylindrical package and through-hole terminals.

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3

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1k+

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Vyrian

USA . 3,474 parts In-Stock

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Anansix

USA . 1,830 parts In-Stock

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Digiode

USA . 1,398 parts In-Stock

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Native Components

USA . 450 parts In-Stock

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$8.165

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450

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Northwest PG Solutions

USA . 216 parts In-Stock

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$8.981

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$8.083

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216

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One Stop Electronics

USA . 742 parts In-Stock

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$62.050

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742

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UNI Independent Distributors

Spain . 5,847 parts In-Stock

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Corphita

USA . 3,656 parts In-Stock

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Overview

Elevate your projects with the BC876-T/R from NXP Semiconductors—a premium PNP Darlington transistor designed for exceptional performance and reliability. Engineered in a robust plastic/epoxy package, this small signal BJT excels in switching applications, ensuring efficiency with impressive gain. Trust in NXP's renowned quality and innovation to power your designs, delivering unmatched value, thermal stability, and seamless integration for superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides excellent protection against moisture and other environmental factors, ensuring reliable performance in various applications.

Polarity or Channel Type: PNP

As a PNP transistor, this component is suitable for applications that require high current gain and efficient switching capabilities, making it ideal for various electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration, along with a built-in diode and resistor, allows for higher current gain and simplifies circuit design, making it easier to implement in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control large loads, making it a great choice for power management in electronic devices.

Maximum VCEsat: 1.8 V

A low VCEsat of 1.8 V indicates minimal voltage drop across the transistor when it is conducting, enhancing power efficiency and reducing heat generation.

Package Shape: ROUND

The round package shape fits well in many circuit layouts, allowing easy integration into both through-hole and surface-mount applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easy handling during assembly, making it suitable for prototyping and production.

No. of Terminals: 3

With three terminals, this transistor is user-friendly and compatible with a wide range of configurations, aiding in flexible circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style can be advantageous for thermal management, helping to dissipate heat effectively.

Minimum DC Current Gain (hFE): 2000

A minimum DC current gain of 2000 ensures that the transistor can provide a significant amplification of current, making it suitable for low-input current applications.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C allows this transistor to be used in high-temperature environments, ensuring reliability and performance.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45 V allows for a broader range of applications, providing flexibility in various circuit designs.

Transistor Element Material: SILICON

Silicon as the element material offers excellent thermal stability and performance consistency, making it a preferred choice in semiconductor devices.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A ensures substantial load handling capability, making this transistor suitable for power switching applications.

Terminal Position: BOTTOM

With terminals positioned at the bottom, this design enhances surface contact during soldering, improving mechanical stability in assembly.

Nominal Transition Frequency (fT): 200 MHz

A nominal transition frequency of 200 MHz allows for fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC876-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC876-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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