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BC878-AMMO

NXP Semiconductors

BC878-AMMO by NXP Semiconductors

BC878-AMMO by NXP is a PNP Darlington transistor designed for efficient switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,860 parts In-Stock

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Anansix

USA . 1,056 parts In-Stock

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Vyrian

USA . 968 parts In-Stock

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Native Components

USA . 536 parts In-Stock

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$0.297

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$0.285

536

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Northwest PG Solutions

USA . 1,917 parts In-Stock

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$0.327

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$0.288

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$0.288

One Stop Electronics

USA . 606 parts In-Stock

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$14.050

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606

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UNI Independent Distributors

Spain . 1,095 parts In-Stock

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Corphita

USA . 466 parts In-Stock

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Overview

Unlock exceptional performance with the BC878-AMMO by NXP Semiconductors—a PNP Darlington transistor engineered for reliability and efficiency. Its robust construction ensures superior durability, making it ideal for high-demand switching applications. Experience seamless integration in your projects while benefiting from NXP's industry-leading reputation for quality. Elevate your designs with a transistor that delivers outstanding gain and versatility, empowering you to achieve more in electronics innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides a lightweight, cost-effective solution while ensuring durability and good insulation properties.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient switching and signal amplification in various electronic circuits, making it versatile for applications requiring positive switch control.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration significantly amplifies current gain, which is useful in low-signal applications, while the built-in diode and resistor enhance circuit protection and functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product ensures fast operation and efficient performance in control systems and power management.

Maximum VCEsat: 1.8 V

A low saturation voltage of 1.8 V allows for better power efficiency and less heat generation during operation, enhancing overall system performance.

Package Shape: ROUND

The round package shape is conducive for uniform thermal distribution and compatibility with various mounting techniques, aiding in ease of design integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and effective electrical connections, making it suitable for a wide range of soldering techniques.

No. of Terminals: 3

Three terminals simplify the circuit design while providing essential functionality for collector, emitter, and base connections, ensuring efficient operation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style facilitates better packing density and is ideal for applications where space is a constraint.

Minimum DC Current Gain (hFE): 2000

A high minimum DC current gain of 2000 ensures that this transistor can amplify weak signals effectively, making it suitable for high-gain applications.

Maximum Operating Temperature: 150 °C

Operating at high temperatures up to 150 °C guarantees reliability in demanding environments, thus extending the product's lifespan and operational capability.

Maximum Collector-Emitter Voltage: 60 V

A maximum collector-emitter voltage rating of 60 V enables the transistor to handle moderate voltage environments, making it flexible for various applications.

Transistor Element Material: SILICON

Silicon as the transistor element material provides excellent thermal stability and frequency response, essential for consistent performance in electronic applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current rating of 1 A, this transistor is capable of driving moderate loads, making it a cost-effective solution for many electronic projects.

Terminal Position: BOTTOM

The bottom terminal position facilitates effective heat dissipation and eases PCB layout design, ensuring reliability and performance.

Nominal Transition Frequency (fT): 200 MHz

A nominal transition frequency of 200 MHz allows for high-speed switching applications, enhancing performance in RF and high-frequency designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC878-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC878-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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