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BC876-AMMO

NXP Semiconductors

BC876-AMMO by NXP Semiconductors

BC876-AMMO by NXP Semiconductors is a PNP Darlington transistor designed for efficient switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in circuits.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,669 parts In-Stock

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Vyrian

USA . 2,722 parts In-Stock

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Anansix

USA . 421 parts In-Stock

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Native Components

USA . 98 parts In-Stock

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$15.210

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Northwest PG Solutions

USA . 835 parts In-Stock

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$16.731

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$15.058

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835

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One Stop Electronics

USA . 389 parts In-Stock

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$19.050

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UNI Independent Distributors

Spain . 7,713 parts In-Stock

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Corphita

USA . 1,160 parts In-Stock

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Overview

Unlock unparalleled performance with the BC876-AMMO from NXP Semiconductors—a trusted leader in innovative semiconductor solutions. Crafted for reliability, this PNP Darlington transistor excels in switching applications, providing exceptional current gain and thermal stability. Its robust design ensures optimal efficiency across various projects, making it ideal for consumer electronics, industrial automation, and beyond. Experience quality that drives your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material makes the transistor suitable for various applications by providing good environmental resistance.

Polarity or Channel Type: PNP

The PNP configuration is ideal for specific circuits, allowing for easier integration in certain designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration significantly increases current gain, making it highly efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching, it delivers rapid response times and high efficiency in control systems.

Maximum VCEsat: 1.8 V

A low VCEsat value minimizes power loss and enhances overall efficiency, making it suitable for high-performance applications.

Package Shape: ROUND

The round package shape is ideal for space-constrained designs, facilitating easier placement in compact electronics.

Terminal Form: THROUGH-HOLE

Through-hole mounting allows for easier handling and soldering, making assembly straightforward for various projects.

No. of Terminals: 3

With three terminals, this basic configuration simplifies component integration while providing essential functionality.

Package Style (Meter): CYLINDRICAL

The cylindrical package style contributes to an efficient thermal management design during operations.

Minimum DC Current Gain (hFE): 2000

A high DC current gain allows for effective amplification, making it an excellent choice for low-power applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature threshold, the transistor is suited for demanding environments without risk of failure.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45V ensures versatility, allowing it to be used in a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers excellent semiconductor properties, ensuring reliability and performance in various conditions.

Maximum Collector Current (IC): 1 A

The capability to handle a maximum collector current of 1 A makes it suitable for many electronic circuits.

Terminal Position: BOTTOM

Bottom terminal positioning aids in better PCB layout and heat distribution, enhancing overall device performance.

Nominal Transition Frequency (fT): 200 MHz

A nominal transition frequency of 200 MHz allows for high-speed operation, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC876-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC876-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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