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BC877-T/R

NXP Semiconductors

BC877-T/R by NXP Semiconductors

BC877-T/R by NXP is a high-performance NPN Darlington transistor ideal for switching applications. It features a max VCEsat of 1.8V, hFE of 2000, and operates up to 150 °C. Its compact cylindrical package ensures efficient thermal management in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,538 parts In-Stock

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Vyrian

USA . 3,465 parts In-Stock

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Anansix

USA . 836 parts In-Stock

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836

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Native Components

USA . 253 parts In-Stock

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$16.120

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Northwest PG Solutions

USA . 1,231 parts In-Stock

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$17.732

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$15.959

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One Stop Electronics

USA . 1,542 parts In-Stock

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$55.050

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Corphita

USA . 3,848 parts In-Stock

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UNI Independent Distributors

Spain . 550 parts In-Stock

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Overview

Elevate your designs with the BC877-T/R from NXP Semiconductors, a trusted leader in innovative technology. This high-quality small-signal NPN Darlington transistor combines exceptional performance with reliability, offering a remarkable current gain for efficient switching applications. Its robust construction ensures durability even in demanding environments, making it ideal for consumer electronics, automation, and various industrial uses. Unlock unparalleled efficiency and versatility with NXP’s commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package offers excellent insulation and protection against environmental factors, making it durable in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it provides high-speed switching capabilities, making it suitable for a variety of electronic switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration ensures high current gain and simplifies circuit design by integrating additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, it enables efficient operation in circuits that require rapid on/off control.

Maximum VCEsat: 1.8 V

A low VCEsat allows for reduced power loss and increased efficiency, essential for minimizing heat generation during operation.

Package Shape: ROUND

The round package shape enhances thermal performance and contributes to robust physical integration within various electronic components.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides secure connections and ease of assembly, making it ideal for prototyping and permanent installations.

No. of Terminals: 3

The three-terminal configuration allows for straightforward circuit integration and offers versatility in applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates easy integration into compact designs, useful for devices with space constraints.

Minimum DC Current Gain (hFE): 2000

A high current gain ensures the transistor can amplify weak signals effectively, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, it can function reliably in high-temperature environments, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 60 V

A high maximum collector-emitter voltage ensures compatibility with a wide range of voltage applications, enhancing circuit design flexibility.

Transistor Element Material: SILICON

Silicon is a well-established material for transistors, providing excellent performance characteristics and reliability in various applications.

Maximum Collector Current (IC): 1 A

This specification allows for substantial current handling capability, making it suitable for driving loads in various electronic circuits.

Terminal Position: BOTTOM

Bottom terminal positioning aids in space-efficient layout designs in PCBs, facilitating compact arrangements without sacrificing performance.

Nominal Transition Frequency (fT): 200 MHz

A high transition frequency enables the transistor to operate effectively at high speeds, making it ideal for applications requiring fast switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC877-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.8 V

Trade Compliance

BC877-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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