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2PC4081R,115

NXP Semiconductors

2PC4081R,115 by NXP Semiconductors

NXP Semiconductors' 2PC4081R,115 is a NPN BJT transistor with VCEsat of 0.4V, hFE of 180, and IC of 0.15A. Ideal for switching applications in small outline packages due to its low power dissipation and high transition frequency of 100MHz.

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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DigiKey

USA . 37,425 parts In-Stock

1+ parts

$0.190

100+ parts

$0.072

1k+ parts

$0.046

10k+ parts

-

37,425

$0.190

$0.072

$0.046

-

Mouser Electronics

USA . 9,347 parts In-Stock

1+ parts

$0.240

100+ parts

$0.084

1k+ parts

$0.053

10k+ parts

$0.046

9,347

$0.240

$0.084

$0.053

$0.046

Newark

USA . 1,495 parts In-Stock

1+ parts

$0.333

100+ parts

$0.126

1k+ parts

$0.081

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-

1,495

$0.333

$0.126

$0.081

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Rochester

USA . 990,140 parts In-Stock

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-

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$0.048

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$0.040

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$0.036

990,140

-

$0.048

$0.040

$0.036

Arrow

USA . 684,338 parts In-Stock

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$0.015

684,338

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$0.015

Verical

USA . 684,338 parts In-Stock

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$0.019

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684,338

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$0.019

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Elektronika Sales Private Limited

India . 60,000 parts In-Stock

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60,000

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Element14

Singapore . 2,925 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

$0.050

10k+ parts

$0.032

2,925

-

$0.086

$0.050

$0.032

Chip1Stop

Japan . 1,919 parts In-Stock

1+ parts

-

100+ parts

$0.043

1k+ parts

$0.030

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$0.029

1,919

-

$0.043

$0.030

$0.029

Farnell

UK . 1,785 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

$0.031

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$0.026

1,785

-

$0.050

$0.031

$0.026

Distributors (In-Stock)

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Digiode

USA . 2,685 parts In-Stock

1+ parts

$0.021

100+ parts

-

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2,685

$0.021

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Nova Conductors

Japan . 300 parts In-Stock

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$0.033

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300

$0.033

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Chip Stock

USA . 83,000 parts In-Stock

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83,000

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ACDS - Activité Composants Distribution Service

France . 35,754 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 11,925 parts In-Stock

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Vyrian

USA . 5,371 parts In-Stock

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VNN

France . 1,599 parts In-Stock

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Anansix

USA . 1,480 parts In-Stock

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1,480

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Distributors (Availability)

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Semicontronic

India . 496,048 parts In-Stock

1+ parts

$0.013

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$0.013

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$0.013

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496,048

$0.013

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Corphita

USA . 1,908 parts In-Stock

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$0.020

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$0.020

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Component Stockers USA

USA . 1,796,160 parts In-Stock

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$0.020

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$0.020

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$0.020

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$0.010

1,796,160

$0.020

$0.020

$0.020

$0.010

Argo Parts USA

USA . 2,902 parts In-Stock

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$0.033

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$0.032

2,902

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Netroflash

USA . 100 parts In-Stock

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$0.033

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$0.031

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100

$0.033

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$0.031

AZTECH Wire

Italy . 11,698 parts In-Stock

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$0.050

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11,698

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Andel Nordic

Denmark . 126 parts In-Stock

1+ parts

$6.907

100+ parts

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$6.631

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$6.631

126

$6.907

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$6.631

$6.631

Perfect Parts

USA . 10,065 parts In-Stock

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UNI Independent Distributors

Spain . 5,540 parts In-Stock

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Continental Prestige Electronics

USA . 5,160 parts In-Stock

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$0.043

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Supply Digital

USA . 704 parts In-Stock

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704

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Overview

Experience the superior quality and reliability of NXP Semiconductors with the 2PC4081R,115 Small Signal Bipolar Junction Transistor. Ideal for switching applications, this NPN transistor offers a maximum VCEsat of just 0.4V, ensuring efficient performance. With a minimum DC current gain of 180 and a maximum collector-emitter voltage of 50V, this transistor provides exceptional value and versatility. Whether you're designing consumer electronics or industrial equipment, trust NXP Semiconductors to deliver cutting-edge technology for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching circuits, making this transistor suitable for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Switching application indicates that the transistor can switch quickly between on and off states, ideal for various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto PCBs.

Maximum VCEsat: 0.4 V

Low VCEsat value indicates less power loss and improved efficiency in switch operations.

Package Shape: RECTANGULAR

Rectangular shape provides ease of handling and placement in circuit layouts.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and connection to PCBs.

Maximum Power Dissipation (Abs): 0.2 W

Low power dissipation ensures reliability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space in compact electronic devices.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures amplification and stability in transistor's operation.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows for use in various environments and applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes the risk of oscillation in high-frequency circuits.

Maximum Collector-Emitter Voltage: 50 V

Suitable voltage rating for protecting the transistor in various circuit configurations.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in transistor operation.

Maximum Collector Current (IC): 0.15 A

Moderate collector current capability suitable for low to medium power applications.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance for long-lasting connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time indicates quick and efficient soldering process during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and bonding of the transistor leads.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency indicates good response in high-frequency circuits and applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081R,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081R,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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