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2PC4081Q-TAPE-7

NXP Semiconductors

2PC4081Q-TAPE-7 by NXP Semiconductors

2PC4081Q-TAPE-7 from NXP Semiconductors is a single NPN BJT designed for switching applications. It features a max VCEsat of 0.4V, hFE of 120, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,292 parts In-Stock

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Anansix

USA . 2,281 parts In-Stock

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Vyrian

USA . 72 parts In-Stock

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72

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Native Components

USA . 758 parts In-Stock

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$6.290

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758

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One Stop Electronics

USA . 1,465 parts In-Stock

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$63.050

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$63.050

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UNI Independent Distributors

Spain . 5,250 parts In-Stock

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Corphita

USA . 4,146 parts In-Stock

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Northwest PG Solutions

USA . 45 parts In-Stock

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$6.164

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Overview

Elevate your electronic designs with the 2PC4081Q-TAPE-7 from NXP Semiconductors, a trusted leader in high-quality components. This small signal NPN transistor excels in switching applications, ensuring efficient performance even at elevated temperatures. Its compact, surface-mount design fits seamlessly into modern circuits, while its robust reliability enhances your project's longevity. Choose NXP for unmatched quality and innovation that empowers your creations!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package ensures durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, providing versatility for designers.

Configuration: SINGLE

A single configuration simplifies circuit design and makes it ideal for many electronic applications where compactness is essential.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently manage power in various electronic circuits.

Surface Mount: YES

Surface mount technology allows for automated assembly and a reduction in space on printed circuit boards, enhancing design flexibility.

Maximum VCEsat: 0.4 V

A low VCEsat contributes to higher efficiency in switching applications, reducing power losses and improving thermal performance.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on PCB layouts and is optimal for high-density designs.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and are compatible with automated soldering processes, improving assembly reliability.

No. of Terminals: 3

With three terminals, this transistor supports straightforward and flexible circuit configurations, making it easy to integrate.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, enabling more compact device designs.

Minimum DC Current Gain (hFE): 120

A minimum hFE of 120 ensures good amplification capabilities, making it suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function in demanding environments, providing greater design flexibility.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance enables faster switching speeds, improving performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 40 V

A maximum voltage rating of 40 V makes the transistor suitable for a wide range of general-purpose applications.

Transistor Element Material: SILICON

Silicon is a well-established material for transistors, providing good performance, reliability, and efficiency in versatile applications.

Maximum Collector Current (IC): 0.1 A

This collector current rating supports moderate power applications, allowing for effective switching or amplification of signals.

Terminal Position: DUAL

Dual terminal positioning can enhance layout design options and simplify routing on PCBs, accommodating various board configurations.

Nominal Transition Frequency (fT): 100 MHz

With a transition frequency of 100 MHz, this transistor is well-suited for high-speed switching applications, ensuring effective signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081Q-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081Q-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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