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2PC4081R

NXP Semiconductors

2PC4081R by NXP Semiconductors

The NXP Semiconductors 2PC4081R is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.15A. It is commonly used for switching applications due to its low VCEsat of 0.4V and high DC current gain (hFE) of 180.

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Lifecycle Status

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7

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1k+

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Classic Components Corporation

USA . 2,854 parts In-Stock

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VNN

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Digiode

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ACDS - Activité Composants Distribution Service

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Vyrian

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Nova Conductors

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One Stop Electronics

USA . 967 parts In-Stock

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AZTECH Wire

Italy . 3,227 parts In-Stock

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Semicontronic

India . 358 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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UNI Independent Distributors

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A-Z Elektronik GmbH

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Kepictronics

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Glotronic Ltd.

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S.R.D Solutions

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Supply Digital

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Discover the power and reliability of the 2PC4081R by NXP Semiconductors! As a leading manufacturer in the industry, NXP delivers exceptional quality and innovation, ensuring that our products exceed customer expectations. The 2PC4081R falls under the category of Small Signal Bipolar Junction Transistors (BJT), perfect for various switching applications. With its NPN polarity and single configuration, it offers seamless performance and versatility. Designed with a surface-mount package and gull-wing terminals, this transistor is easy to install and ensures stability. With a low VCEsat of just 0.4 V and maximum collector current of 0.15 A, the 2PC4081R provides efficient power consumption and reliable operation. Whether you're working on consumer electronics or industrial applications, this transistor is your ultimate solution. Trust NXP and experience the value and benefits that the 2PC4081R brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in electronic circuits, making it easy to integrate into existing designs.

Configuration: SINGLE

Simplifies circuit design and allows for easy installation.

Transistor Application: SWITCHING

Designed for switching applications, providing efficient performance in those scenarios.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, saving space and improving overall reliability.

Maximum VCEsat: 0.4 V

Low VCEsat reduces power consumption and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Simplifies the design and placement of the transistor in circuits.

Terminal Form: GULL WING

Facilitates easy soldering and connection to PCBs.

No. of Terminals: 3

Simplifies circuit design and connection.

Maximum Power Dissipation (Abs): 0.2 W

Allows for safe operation within specified power limits.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the PCB and enables high-density designs.

Minimum DC Current Gain (hFE): 180

Ensures consistency in amplification and switching performance.

Maximum Operating Temperature: 150 °C

Allows for reliable operation in a wide range of temperatures.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of operating voltages in various applications.

Transistor Element Material: SILICON

Provides high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capability for many switching applications.

Terminal Finish: Tin (Sn)

Provides good solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

Allows for flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow process during manufacturing.

Peak Reflow Temperature °C: 260

Supports high-temperature reflow processes for reliable soldering.

Nominal Transition Frequency (fT): 100 MHz

Enables high-speed switching operations in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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