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2PC4081RT/R

NXP Semiconductors

2PC4081RT/R by NXP Semiconductors

NXP Semiconductors' 2PC4081RT/R is a NPN BJT transistor for switching applications. With VCEsat of 0.4V, hFE of 180, and IC of 0.15A, it operates at up to 150°C. The GULL WING terminal form and small outline package make it suitable for surface mount designs in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Digiode

USA . 4,028 parts In-Stock

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VNN

France . 2,995 parts In-Stock

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2,995

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Anansix

USA . 2,595 parts In-Stock

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Vyrian

USA . 1,644 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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AZTECH Wire

Italy . 652 parts In-Stock

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$9.936

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652

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One Stop Electronics

USA . 1,217 parts In-Stock

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$28.050

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Semicontronic

India . 666 parts In-Stock

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$48.050

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$46.849

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$46.608

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666

$48.050

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Continental Prestige Electronics

USA . 4,584 parts In-Stock

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Argo Parts USA

USA . 2,662 parts In-Stock

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Corphita

USA . 873 parts In-Stock

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UNI Independent Distributors

Spain . 381 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Enhance your electronic designs with the 2PC4081RT/R by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With NPN polarity and a maximum VCEsat of 0.4V, this transistor offers reliable performance in a compact package. Whether you're working on consumer electronics or industrial equipment, this product's superior design and advanced technology deliver exceptional value and efficiency. Trust NXP Semiconductors for cutting-edge solutions that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and resistance to environmental factors.

Polarity or Channel Type:

NPN - Suitable for a wide range of applications requiring NPN transistors.

Configuration:

SINGLE - Simplifies circuit design and integration.

Transistor Application:

SWITCHING - Ideal for applications requiring fast switching speeds.

Surface Mount:

YES - Allows for easy and efficient PCB mounting.

Maximum VCEsat:

0.4 V - Ensures low saturation voltage for efficient operation.

Package Shape:

RECTANGULAR - Offers easy handling and assembly in compact spaces.

Terminal Form:

GULL WING - Facilitates secure and reliable connections.

No. of Terminals:

3 - Simplifies circuit connections and layout.

Package Style (Meter):

SMALL OUTLINE - Saves space and allows for high-density PCB designs.

Minimum DC Current Gain (hFE):

180 - Provides stable and consistent amplification.

Maximum Operating Temperature:

150 °C - Allows for reliable operation in a wide range of environments.

Maximum Collector-Base Capacitance:

3.5 pF - Minimizes signal distortion and interference.

Maximum Collector-Emitter Voltage:

50 V - Suitable for low to medium voltage applications.

Transistor Element Material:

SILICON - Offers high performance and reliability.

Maximum Collector Current (IC):

0.15 A - Supports a range of current requirements in various applications.

Terminal Finish:

TIN - Provides a cost-effective and reliable terminal surface.

Terminal Position:

DUAL - Enables versatile mounting orientations.

Nominal Transition Frequency (fT):

100 MHz - Allows for high-frequency signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081RT/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081RT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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