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2PC4081R,135

NXP Semiconductors

2PC4081R,135 by NXP Semiconductors

NXP Semiconductors' 2PC4081R,135 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.4V, hFE of 180, and fT of 100MHz. With a max collector-emitter voltage of 50V and collector current of 0.15A, it's ideal for small outline packages in electronic circuits.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,290 parts In-Stock

1+ parts

$0.190

100+ parts

$0.072

1k+ parts

$0.046

10k+ parts

$0.035

4,290

$0.190

$0.072

$0.046

$0.035

Mouser Electronics

USA . 3,787 parts In-Stock

1+ parts

$0.190

100+ parts

$0.073

1k+ parts

$0.041

10k+ parts

$0.028

3,787

$0.190

$0.073

$0.041

$0.028

Rochester

USA . 600,000 parts In-Stock

1+ parts

-

100+ parts

$0.048

1k+ parts

$0.040

10k+ parts

$0.036

600,000

-

$0.048

$0.040

$0.036

Farnell

UK . 300,000 parts In-Stock

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Verical

USA . 300,000 parts In-Stock

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$0.044

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$0.044

Distributors (In-Stock)

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Digiode

USA . 1,159 parts In-Stock

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$0.021

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-

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1,159

$0.021

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Nova Conductors

Japan . 10 parts In-Stock

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$0.040

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10

$0.040

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Chip Stock

USA . 160,000 parts In-Stock

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Vyrian

USA . 8,911 parts In-Stock

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VNN

France . 3,347 parts In-Stock

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Anansix

USA . 953 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 483,625 parts In-Stock

1+ parts

$0.019

100+ parts

$0.019

1k+ parts

$0.018

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-

483,625

$0.019

$0.019

$0.018

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Ampacity Inc.

Singapore . 241,912 parts In-Stock

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$0.019

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Corphita

USA . 1,030 parts In-Stock

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$0.020

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$0.020

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.039

100+ parts

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$0.038

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100

$0.039

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$0.038

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Argo Parts USA

USA . 751 parts In-Stock

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$0.040

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$0.039

751

$0.040

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$0.039

AZTECH Wire

Italy . 13,042 parts In-Stock

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$0.180

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$0.180

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Microchip USA

USA . 2,689 parts In-Stock

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$0.247

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2,689

$0.247

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Continental Prestige Electronics

USA . 300,000 parts In-Stock

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$0.021

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Supply Digital

USA . 1,758 parts In-Stock

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1,758

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UNI Independent Distributors

Spain . 407 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the 2PC4081R,135 by NXP Semiconductors. This small signal bipolar junction transistor (BJT) is designed for high-performance switching applications, ensuring seamless functionality and reliability. With a maximum VCEsat of only 0.4V and a minimum DC current gain of 180, this NPN transistor offers unmatched efficiency and precision. The package style in a small outline ensures easy integration, while the maximum operating temperature of 150°C guarantees durability. Trust NXP Semiconductors for top-quality components that deliver exceptional results every time. Elevate your projects to new heights with the 2PC4081R,135!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package, ensuring long-term reliability and ease of handling.

Polarity or Channel Type: NPN

Commonly used type for a wide range of applications, making it versatile and compatible with various circuits.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Facilitates easy and secure mounting on PCBs, saving space and improving overall circuit layout.

Maximum VCEsat: 0.4 V

Low saturation voltage minimizes power loss and heat dissipation, resulting in energy-efficient performance.

Package Shape: RECTANGULAR

Easily fits into standard PCB designs and allows for efficient use of board space.

Terminal Form: GULL WING

Provides secure and reliable connections, reducing the risk of signal interruptions or loss.

No. of Terminals: 3

Simple and straightforward to connect in circuits, ensuring easy installation and troubleshooting.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating, increasing overall reliability and longevity.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for denser circuit layouts.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures stable and predictable amplification in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments without compromising performance.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance minimizes signal distortion and interference, ensuring clean and accurate signal processing.

Maximum Collector-Emitter Voltage: 50 V

Adequate voltage rating for most common applications, providing a safety margin against overvoltage conditions.

Transistor Element Material: SILICON

High-quality material known for its reliability and efficiency, ensuring consistent performance over time.

Maximum Collector Current (IC): 0.15 A

Sufficient current handling capability for many low to medium power applications, ensuring versatile usage.

Terminal Finish: TIN

Corrosion-resistant finish for long-term durability and reliable electrical connections.

Terminal Position: DUAL

Dual terminal layout allows for flexible pin configuration and easy integration into different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of solder joint damage and ensures reliable assembly during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature for secure and robust soldering, ensuring strong connections in the assembly process.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, ideal for modern electronic devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081R,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081R,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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