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2PC4617QM,315

NXP Semiconductors

2PC4617QM,315 by NXP Semiconductors

NXP Semiconductors' 2PC4617QM,315 is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.1A. Ideal for switching applications, it has a min. DC current gain of 120 and operates at up to 150°C, making it suitable for various electronic devices.

Median Price

$0.021

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TTI

USA . 890,000 parts In-Stock

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-

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$0.007

890,000

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$0.007

Arrow

USA . 89,800 parts In-Stock

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$0.021

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$0.021

Verical

USA . 89,800 parts In-Stock

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$0.021

89,800

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$0.021

Chip1Stop

Japan . 89,800 parts In-Stock

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$0.026

89,800

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$0.026

Farnell

UK . 59,000 parts In-Stock

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59,000

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Rochester

USA . 54,000 parts In-Stock

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$0.027

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$0.022

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54,000

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$0.027

$0.022

$0.020

Distributors (In-Stock)

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Digiode

USA . 2,104 parts In-Stock

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$0.021

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$0.021

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Nova Conductors

Japan . 500 parts In-Stock

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$0.043

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$0.043

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Chip Stock

USA . 180,000 parts In-Stock

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Vyrian

USA . 4,103 parts In-Stock

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VNN

France . 1,045 parts In-Stock

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Anansix

USA . 576 parts In-Stock

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576

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Corphita

USA . 60 parts In-Stock

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$0.020

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AZTECH Wire

Italy . 7,363 parts In-Stock

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$0.030

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Ampacity Inc.

Singapore . 156,014 parts In-Stock

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$0.037

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$0.037

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Bastille Electronics

Australia . 200 parts In-Stock

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$0.043

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$0.041

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$0.039

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$0.038

200

$0.043

$0.041

$0.039

$0.038

Argo Parts USA

USA . 2,172 parts In-Stock

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$0.043

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$0.042

2,172

$0.043

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$0.042

Advanced Electronics

New Zealand . 40 parts In-Stock

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$1.508

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$1.372

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$1.237

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40

$1.508

$1.372

$1.237

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Continental Prestige Electronics

USA . 59,000 parts In-Stock

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$0.025

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$0.025

Perfect Parts

USA . 11,166 parts In-Stock

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iodParts Technologies Inc.

India . 8,880 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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UNI Independent Distributors

Spain . 421 parts In-Stock

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Supply Digital

USA . 219 parts In-Stock

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Overview

Elevate your electronic designs with the reliable 2PC4617QM,315 Small Signal Bipolar Junction Transistor by NXP Semiconductors. Crafted with precision and expertise, this NPN transistor offers unparalleled switching capabilities for a wide range of applications. With its high DC current gain and low power dissipation, this transistor maximizes efficiency while ensuring optimal performance. Whether you're working on consumer electronics or industrial automation, this product's quality and versatility will take your projects to the next level. Experience the difference with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

Single configuration makes it easy to integrate and use in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Surface Mount: YES

Surface mount capability allows for easy and compact integration on PCBs.

Maximum Power Dissipation (Abs): 0.43 W

The high power dissipation capability ensures optimal performance and reliability under varying conditions.

Minimum DC Current Gain (hFE): 120

The high minimum DC current gain ensures stable and controlled amplification of signals.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes the transistor suitable for a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides flexibility in circuit design and applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency, low noise, and excellent performance characteristics for the transistor.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating allows for handling higher currents, suitable for various applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency ensures fast switching and response times, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4617QM,315 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2PC4617QM,315 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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