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2PC4081R-TAPE-7

NXP Semiconductors

2PC4081R-TAPE-7 by NXP Semiconductors

2PC4081R-TAPE-7 by NXP is a single NPN BJT designed for switching applications. It features a max VCEsat of 0.4V, hFE of 180, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs requiring efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,667 parts In-Stock

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4,667

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Vyrian

USA . 1,847 parts In-Stock

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1,847

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Anansix

USA . 1,432 parts In-Stock

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1,432

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Native Components

USA . 547 parts In-Stock

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$0.230

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$0.221

547

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Northwest PG Solutions

USA . 309 parts In-Stock

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$0.253

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$0.223

309

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One Stop Electronics

USA . 1,467 parts In-Stock

1+ parts

$12.050

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1,467

$12.050

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UNI Independent Distributors

Spain . 4,515 parts In-Stock

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Corphita

USA . 3,056 parts In-Stock

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Overview

Unlock your design potential with the 2PC4081R-TAPE-7 from NXP Semiconductors, a leading name in innovative solutions. This high-quality NPN small signal transistor excels in switching applications, ensuring reliable performance in compact electronic devices. With its superior gain and robust thermal characteristics, it enhances efficiency while saving space. Choose NXP for unmatched reliability and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, providing versatility in circuit designs.

Configuration: SINGLE

A single configuration allows for compact designs and efficient usage in small devices, suitable for space-constrained applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures fast response times and reliable performance in digital circuits.

Surface Mount: YES

Surface mount technology (SMT) enables efficient PCB assembly and provides smaller form factors, essential in modern electronics.

Maximum VCEsat: 0.4 V

A low VCEsat indicates minimal voltage drop across the transistor during operation, enhancing energy efficiency and reducing heat generation.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs and facilitates easy integration in various circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering properties and ensure reliable connections on surface-mounted boards.

No. of Terminals: 3

Three terminals allow for straightforward connections in circuits, simplifying design and integration.

Package Style (Meter): SMALL OUTLINE

The small outline package allows for increased packing density on PCBs, making it ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 180

A high hFE indicates strong amplification capabilities, making the transistor suitable for low-power signal amplification.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance in demanding environments and various applications.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion, enhancing performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 40 V

With a maximum VCE of 40 V, this transistor is suitable for a wide range of applications without breakdown risk.

Transistor Element Material: SILICON

Silicon material offers excellent electrical characteristics, ensuring good performance and stability in various conditions.

Maximum Collector Current (IC): 0.1 A

A maximum IC of 0.1 A allows the transistor to handle moderate switching loads, making it versatile for different applications.

Terminal Position: DUAL

Dual terminal positioning allows flexibility in wiring and layout design, enhancing circuit design options.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz makes this transistor suitable for high-speed applications, ensuring efficient operation in fast-switching circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081R-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081R-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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