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2PC4081Q-TAPE-13

NXP Semiconductors

2PC4081Q-TAPE-13 by NXP Semiconductors

2PC4081Q-TAPE-13 by NXP is a single NPN BJT designed for switching applications. It features a max VCEsat of 0.4V, hFE of 120, and operates up to 150 °C. This surface-mount transistor is ideal for compact electronic designs requiring efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,342 parts In-Stock

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Digiode

USA . 2,242 parts In-Stock

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Anansix

USA . 453 parts In-Stock

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453

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Distributors (Availability)

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Northwest PG Solutions

USA . 15 parts In-Stock

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$3.049

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15

$3.049

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One Stop Electronics

USA . 1,139 parts In-Stock

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$40.050

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$40.050

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UNI Independent Distributors

Spain . 7,467 parts In-Stock

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Corphita

USA . 581 parts In-Stock

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Native Components

USA . 558 parts In-Stock

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$2.689

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558

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Overview

Unlock the power of precision with the 2PC4081Q-TAPE-13 from NXP Semiconductors, a leader in high-quality semiconductor solutions. This robust NPN small signal transistor excels in switching applications, offering reliable performance and efficiency. Its compact design and surface mount capability make it ideal for space-constrained projects. Trust in NXP’s commitment to innovation and quality—enhance your designs with unmatched reliability and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and reliability, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is well-suited for switching applications, providing efficient performance.

Configuration: SINGLE

A single configuration allows for simpler circuit designs and reduced space requirements.

Transistor Application: SWITCHING

Designed for switching, offering fast response times and efficient operation in control circuits.

Surface Mount: YES

Surface mount capability allows for automated assembly and saves board space.

Maximum VCEsat: 0.4 V

Low saturation voltage ensures minimal power loss during operation, increasing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape helps maximize layout options on PCBs, improving design flexibility.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and improve mechanical stability.

No. of Terminals: 3

Three terminals make it easy to integrate this transistor in standard electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes board footprint and optimizes space in compact designs.

Minimum DC Current Gain (hFE): 120

A high minimum DC current gain ensures adequate amplification for a wide range of applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable functionality in demanding environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance contributes to fast switching speeds and improved frequency response.

Maximum Collector-Emitter Voltage: 40 V

With a maximum collector-emitter voltage of 40 V, this transistor can handle a variety of voltage levels.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and performance, ideal for electronic applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A allows for the control of moderate power loads.

Terminal Position: DUAL

Dual terminal position simplifies connection and integration into typical circuit layouts.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz enables high-speed operation, suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PC4081Q-TAPE-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2PC4081Q-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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