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MTA18ASF1G72HZ-2G1A1

Micron Technology

MTA18ASF1G72HZ-2G1A1 by Micron Technology

Micron Technology's MTA18ASF1G72HZ-2G1A1 DDR DRAM MODULE offers 1GX72 organization, 72-bit memory width, and operates at 1.2V. Ideal for servers and high-performance computing applications due to its synchronous operation and self-refresh capability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 24,700 parts In-Stock

1+ parts

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24,700

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Vyrian

USA . 8,075 parts In-Stock

1+ parts

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8,075

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Digiode

USA . 1,774 parts In-Stock

1+ parts

-

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1,774

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

-

100+ parts

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600

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Component Sense

UK . 290 parts In-Stock

1+ parts

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290

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,429 parts In-Stock

1+ parts

$7.000

100+ parts

-

1k+ parts

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10k+ parts

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1,429

$7.000

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AZTECH Wire

Italy . 915 parts In-Stock

1+ parts

$13.920

100+ parts

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915

$13.920

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Corphita

USA . 2,339 parts In-Stock

1+ parts

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2,339

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Elevate your device's performance with the MTA18ASF1G72HZ-2G1A1 by Micron Technology. As a leading manufacturer in the industry, Micron guarantees top-notch quality and reliability. This DDR DRAM MODULE boasts a seamless synchronous operation and self-refresh feature, ensuring smooth and efficient performance. With a memory density of 77309411328 bits and an organization of 1GX72, this module offers unparalleled speed and capacity for a wide range of applications. Experience faster data processing and enhanced multitasking capabilities with the MTA18ASF1G72HZ-2G1A1 – the ultimate choice for power users seeking superior performance.

Feature Benefit Bullets

Package Shape: RECTANGULAR

The rectangular package shape allows for easy installation and placement in various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent and predictable rate, improving system performance.

Self Refresh: YES

Self-refresh capability helps in saving power by allowing the DRAM to refresh itself without relying on external signals.

Nominal Supply Voltage / Vsup (V): 1.2

The lower nominal supply voltage of 1.2V helps in reducing power consumption and heat dissipation, making it energy-efficient.

No. of Terminals: 260

With 260 terminals, this DRAM module provides a high level of connectivity for reliable data transfer.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance of 85°C ensures reliable performance even under demanding conditions.

Organization: 1GX72

With an organization of 1GX72, this DRAM module offers a large capacity and high data transfer rate, suitable for demanding applications.

Memory Density: 77309411328 bit

The high memory density of 77309411328 bits allows for storing large amounts of data, making it ideal for high-performance computing tasks.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this DRAM module efficient and reliable for various applications.

Technical Specifications

DRAM MTA18ASF1G72HZ-2G1A1 attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

DUAL BANK PAGE BURST

Additional Features:

AUTO/SELF REFRESH; WD-MAX

JESD-30 Code:

R-XZMA-N260

Length:

69.6 mm

Memory Density:

77309411328 bit

Memory IC Type:

Memory Width:

72

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

260

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX72

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

30.13 mm

Self Refresh:

YES

Maximum Supply Voltage (Vsup):

1.26 V

Minimum Supply Voltage (Vsup):

1.14 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.7 mm

Trade Compliance

MTA18ASF1G72HZ-2G1A1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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