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MT47H64M16HW-3IT:H

Micron Technology

MT47H64M16HW-3IT:H by Micron Technology

Micron Technology's MT47H64M16HW-3IT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

Median Price

$21.600

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 3 parts In-Stock

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$21.600

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3

$21.600

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Chip Stock

USA . 17,300 parts In-Stock

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Vyrian

USA . 3,179 parts In-Stock

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3,179

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Digiode

USA . 577 parts In-Stock

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NexGen Digital

USA . 62 parts In-Stock

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Nova Conductors

Japan . 21 parts In-Stock

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Prism Electronics

USA . 3 parts In-Stock

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QIE Inc.

USA . 2 parts In-Stock

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North Shore Components

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 500 parts In-Stock

1+ parts

$8.093

100+ parts

-

1k+ parts

$7.770

10k+ parts

$7.770

500

$8.093

-

$7.770

$7.770

AZTECH Wire

Italy . 1,065 parts In-Stock

1+ parts

$12.490

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$12.490

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Ampacity Inc.

Singapore . 1,029 parts In-Stock

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$17.000

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Perfect Parts

USA . 6,563 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,195 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Futuretech Components

Singapore . 1,481 parts In-Stock

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Corphita

USA . 896 parts In-Stock

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Microchip USA

USA . 111 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 16 parts In-Stock

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Overview

Experience the power of cutting-edge technology with Micron Technology's MT47H64M16HW-3IT:H DDR2 DRAM. Designed with precision and reliability in mind, this high-quality memory module offers seamless performance for a wide range of applications. From industrial settings to consumer electronics, this product is the perfect solution for those seeking top-notch memory solutions. With its advanced features and efficient design, the MT47H64M16HW-3IT:H provides exceptional value and benefits to customers looking for reliable memory solutions that deliver outstanding performance. Upgrade your system today with Micron Technology's superior DDR2 DRAM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transmitted at precise intervals, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in reducing power consumption and heat generation, making it energy-efficient.

Maximum Clock Frequency (fCLK): 333 MHz

With a high clock frequency, this product can process data quickly, enhancing system responsiveness and efficiency.

Technical Specifications

DRAM MT47H64M16HW-3IT:H attributes and parameters. Explore more DRAM devices from Micron Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.45 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

333 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

4,8

JESD-30 Code:

R-PBGA-B84

JESD-609 Code:

e0

Length:

12.5 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

84

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA84,9X15,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

1.8

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

4,8

Maximum Standby Current:

.007 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

350 mA

Maximum Supply Voltage (Vsup):

1.9 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead/Silver (Sn/Pb/Ag)

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8 mm

Trade Compliance

MT47H64M16HW-3IT:H Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.32

SB

8542.32.00.15

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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