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VN2222LL-GP003

Microchip Technology

VN2222LL-GP003 by Microchip Technology

VN2222LL-GP003 by Microchip is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With 1W power dissipation and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic circuits.

Median Price

$0.640

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 22,000 parts In-Stock

1+ parts

$0.640

100+ parts

$0.490

1k+ parts

$0.410

10k+ parts

$0.370

22,000

$0.640

$0.490

$0.410

$0.370

DigiKey

USA . 2,211 parts In-Stock

1+ parts

$0.640

100+ parts

$0.490

1k+ parts

-

10k+ parts

$0.490

2,211

$0.640

$0.490

-

$0.490

Mouser Electronics

USA . 1,891 parts In-Stock

1+ parts

$0.640

100+ parts

$0.490

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1,891

$0.640

$0.490

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Adafruit Industries

USA . 3,971 parts In-Stock

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3,971

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Distributors (In-Stock)

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NAC Semi

USA . 18,000 parts In-Stock

1+ parts

$0.370

100+ parts

$0.330

1k+ parts

$0.300

10k+ parts

-

18,000

$0.370

$0.330

$0.300

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.485

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500

$0.485

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Vyrian

USA . 13,339 parts In-Stock

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13,339

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,526 parts In-Stock

1+ parts

$0.474

100+ parts

-

1k+ parts

-

10k+ parts

$0.465

1,526

$0.474

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-

$0.465

Argo Parts USA

USA . 1,338 parts In-Stock

1+ parts

$0.474

100+ parts

-

1k+ parts

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10k+ parts

$0.460

1,338

$0.474

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-

$0.460

Semicontronic

India . 8,501 parts In-Stock

1+ parts

$0.540

100+ parts

$0.526

1k+ parts

$0.524

10k+ parts

-

8,501

$0.540

$0.526

$0.524

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Ampacity Inc.

Singapore . 13,571 parts In-Stock

1+ parts

$0.550

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13,571

$0.550

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Corohmni

South Africa . 21 parts In-Stock

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$1.690

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21

$1.690

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QUARKTWIN TECHNOLOGY LTD

USA . 18,060 parts In-Stock

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18,060

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West Coast Incorporated

USA . 5,892 parts In-Stock

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5,892

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Microchip Technology presents the VN2222LL-GP003, a top-tier Small Signal Field Effect Transistor designed for high-quality performance in switching applications. With Microchip's reputation for excellence in semiconductor technology, customers can trust in the reliability and efficiency of this N-CHANNEL transistor with a built-in diode. Offering a wide range of capabilities from low power dissipation to high breakdown voltage, this enhancement mode FET is the perfect solution for various electronic projects. Upgrade your designs with the VN2222LL-GP003 and experience unparalleled value and benefits that only Microchip Technology can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and protection for the internal components, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Provides efficient current flow in one direction, ensuring reliable performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space, making it ideal for compact electronic devices.

Transistor Application: SWITCHING

Allows for fast and efficient switching between on and off states, making it suitable for power control applications.

Minimum DS Breakdown Voltage: 60 V

Ensures safe operation with high voltage loads, providing reliability in demanding environments.

Package Shape: ROUND

Facilitates easy mounting and installation, making it convenient for use in different setups.

Terminal Form: THROUGH-HOLE

Allows for secure connections and easy soldering, ensuring stable performance in various conditions.

Operating Mode: ENHANCEMENT MODE

Enables precise control over the transistor's conducting state, enhancing efficiency in power management systems.

No. of Terminals: 3

Provides necessary connections for power, control, and ground, making it compatible with a wide range of circuit setups.

Maximum Power Dissipation (Abs): 1 W

Withstands high power levels without overheating, ensuring long-term reliability in demanding applications.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, suitable for applications with limited space availability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and low power consumption, making it energy-efficient and cost-effective.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in high-temperature environments, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Offers high performance and durability, ensuring stable operation over a wide temperature range.

Minimum Operating Temperature: -55 °C

Allows for operation in extreme cold conditions, making it suitable for outdoor and automotive applications.

Maximum Drain Current (ID): 0.23 A

Supports high current flow, making it suitable for power control and switching applications.

Maximum Drain-Source On Resistance: 7.5 ohm

Provides low resistance for efficient power transfer, ensuring minimal power loss and high efficiency.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering, ensuring secure connections in electronic circuits.

Maximum Feedback Capacitance (Crss): 8 pF

Minimizes feedback capacitance for enhanced stability and performance, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) VN2222LL-GP003 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VN2222LL-GP003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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