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VN2222LL-G

Microchip Technology

VN2222LL-G by Microchip Technology

Microchip Technology's VN2222LL-G is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features 0.23A max drain current, 7.5Ω max on resistance, and 8pF feedback capacitance. Operating in enhancement mode, it has a power dissipation of 1W and can withstand temperatures from -55°C to 150°C.

Median Price

$0.499

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 934 parts In-Stock

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Mouser Electronics

USA . 8,756 parts In-Stock

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DigiKey

USA . 5,360 parts In-Stock

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Microchip Technology

USA . 1,743 parts In-Stock

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Distrelec

Netherlands . 1,757 parts In-Stock

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Master Electronics

USA . 3,255 parts In-Stock

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Verical

USA . 3,250 parts In-Stock

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Future Electronics

Canada . 1,400 parts In-Stock

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Chip1Stop

Japan . 1,181 parts In-Stock

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Arrow

USA . 1,000 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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Nova Conductors

Japan . 227 parts In-Stock

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Digiode

USA . 532 parts In-Stock

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TME

Poland . 207 parts In-Stock

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Vyrian

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IBS Electronics

USA . 5,655 parts In-Stock

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Astute Electronics Inc

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Chip Stock

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Electro Sonic

Canada . 1,924 parts In-Stock

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Lakeview Electronics

USA . 985 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Resion

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Component Sense

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North Shore Components

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ComSIT Distribution GmbH

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Prism Electronics

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Ampacity Inc.

Singapore . 11,784 parts In-Stock

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Semicontronic

India . 5,782 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Argo Parts USA

USA . 5,986 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.405

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Corphita

USA . 2,385 parts In-Stock

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Continental Prestige Electronics

USA . 11,191 parts In-Stock

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$0.469

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$0.356

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$0.349

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$0.469

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Aztec Data Supply Inc.

USA . 4,734 parts In-Stock

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$0.792

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Corohmni

South Africa . 283 parts In-Stock

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Kepictronics

USA . 10,930 parts In-Stock

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Lixinc

USA . 9,758 parts In-Stock

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Microchip USA

USA . 8,266 parts In-Stock

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Marpe Global Electronics

Taiwan . 7,953 parts In-Stock

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QualityLine Systems

Poland . 7,319 parts In-Stock

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SupplyDigital Components

Austria . 6,804 parts In-Stock

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Authorized Procurement Solutions

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XL Components Corporation

Australia . 4,964 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,850 parts In-Stock

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Kulean Microsystems

USA . 4,498 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,436 parts In-Stock

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Perfect Parts

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Eastek

USA . 1,000 parts In-Stock

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Problanco Electronics

Mexico . 938 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 672 parts In-Stock

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Glotronic Ltd.

UK . 538 parts In-Stock

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TANS Electronics

Latvia . 435 parts In-Stock

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Overview

Upgrade your electronic projects with the VN2222LL-G Small Signal Field Effect Transistor from Microchip Technology. With its high-quality construction and N-CHANNEL configuration, this transistor is perfect for switching applications. Enjoy the benefits of the built-in diode, enhanced power dissipation, and low drain-source resistance. Whether you're a hobbyist or a professional, this transistor offers exceptional value and performance to elevate your designs. Trust Microchip Technology for reliable components that deliver superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and resistant to environmental factors.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and efficiency compared to P-channel transistors, making this product a reliable choice.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for effective circuit protection and simplifies design, making this product convenient to use.

Transistor Application: SWITCHING

Designed for switching applications, this product offers fast and precise performance in controlling electrical signals.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this product can handle higher voltage levels, ensuring reliable operation in diverse applications.

Package Shape: ROUND

The round shape of the package offers efficient heat dissipation and easy mounting, enhancing the overall performance of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and make it easy to solder the transistor onto circuit boards.

Operating Mode: ENHANCEMENT MODE

This enhancement mode transistor offers low leakage current and high input impedance, making it suitable for low-power applications.

Maximum Drain Current (Abs) (ID): 0.099 A

The maximum drain current rating of 0.099 A ensures that this transistor can handle moderate power loads without overheating.

No. of Terminals: 3

With three terminals, this transistor offers versatility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 1 W

The high power dissipation capability of 1 W allows this transistor to operate efficiently under varying load conditions.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides compactness and efficient use of space in circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The metal-oxide semiconductor technology used in this transistor offers high performance, reliability, and stability.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Transistor Element Material: SILICON

Silicon-based transistors have excellent semiconductor properties, ensuring high efficiency and reliability.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this transistor to function effectively in various environments.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and ensures strong electrical connections for reliable performance.

Maximum Drain Current (ID): 0.23 A

With a maximum drain current rating of 0.23 A, this transistor can handle higher power loads with ease.

Maximum Drain-Source On Resistance: 7.5 ohm

The low drain-source on resistance of 7.5 ohm reduces power loss and improves efficiency in circuit applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and ensures proper alignment in circuit layouts.

Maximum Feedback Capacitance (Crss): 8 pF

The low feedback capacitance of 8 pF minimizes signal distortion and ensures stable operation in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) VN2222LL-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.099 A

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VN2222LL-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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