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IXBH42N170

Littelfuse

IXBH42N170 by Littelfuse

IXBH42N170 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 2.8V, IC of 80A, and VCE of 1700V. Ideal for power control applications due to its high power dissipation capability (360W) and fast turn-off time (1070ns). Package style is flange mount with through-hole terminals.

Median Price

$21.830

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Arrow

USA . 537 parts In-Stock

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$19.523

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$15.503

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$15.307

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$19.523

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Farnell

UK . 184 parts In-Stock

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$21.830

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$15.420

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Mouser Electronics

USA . 666 parts In-Stock

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$28.180

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$18.440

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$28.180

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DigiKey

USA . 605 parts In-Stock

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$29.430

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$19.135

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$18.442

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$29.430

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Element14

Singapore . 26 parts In-Stock

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Chip1Stop

Japan . 510 parts In-Stock

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Verical

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Ozdisan Elektronik

Türkiye . 437 parts In-Stock

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$30.643

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Schukat

Germany . 21 parts In-Stock

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$32.914

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$21.856

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Chip Stock

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NAC Semi

USA . 318 parts In-Stock

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$65.900

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Sunrise Surplus Inc.

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Nova Conductors

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ABC Electronics Ltd.

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$0.130

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$0.089

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$0.089

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$0.089

Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$1.019

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Ampacity Inc.

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Component Stockers USA

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$21.170

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$17.030

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Microchip USA

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Perfect Parts

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Continental Prestige Electronics

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Argo Parts USA

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Aranea Global

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GreenTree Electronics

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Overview

Unlock the power of advanced technology with the IXBH42N170 by Littelfuse. As a leading manufacturer in the industry, Littelfuse delivers top-notch quality and reliability in every product. The IXBH42N170 falls under the category of Insulated Gate Bipolar Transistors (IGBT), perfect for power control applications. With its single configuration and built-in diode, this transistor offers unparalleled performance and efficiency. Experience seamless operation and superior power dissipation with the IXBH42N170, designed to maximize your productivity and deliver exceptional results. Elevate your projects with the IXBH42N170 by Littelfuse.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides excellent insulation and protection for the internal components, ensuring durability and reliability in various applications.

Polarity or Channel Type: N-CHANNEL

Offers improved efficiency and performance compared to P-channel IGBTs, making it a suitable choice for power control applications.

Maximum VCEsat: 2.8 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to lower power dissipation and increased efficiency.

Maximum Collector-Emitter Voltage: 1700 V

High VCE rating allows for handling high voltages in power control applications, ensuring safe and reliable operation.

Transistor Element Material: SILICON

Silicon-based IGBTs offer high switching speeds, low on-state voltage drop, and temperature stability, making them ideal for power control applications.

Maximum Collector Current (IC): 80 A

High IC rating enables the device to carry large currents, making it suitable for high-power applications where heavy current loads are present.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBH42N170 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1070 ns

Nominal Turn On Time (ton):

224 ns

Maximum VCEsat:

2.8 V

Trade Compliance

IXBH42N170 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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