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IXBH20N360HV

Littelfuse

IXBH20N360HV by Littelfuse

IXBH20N360HV by Littelfuse is an N-CHANNEL IGBT with VCEsat of 3.4V, IC of 70A, and VGE(th) of 5V. Ideal for power control applications due to its high power dissipation of 430W, operating temperature up to 150°C, and fast turn-off time of 1285ns. Package style is flange mount with through-hole terminals.

Median Price

$105.290

Lifecycle Status

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10

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1k+

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Chip1Stop

Japan . 210 parts In-Stock

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$104.810

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$102.570

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DigiKey

USA . 696 parts In-Stock

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$105.290

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$87.920

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Mouser Electronics

USA . 127 parts In-Stock

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Farnell

UK . 1 parts In-Stock

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$124.504

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Element14

Singapore . 1 parts In-Stock

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$128.973

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Arrow

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$104.038

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Verical

USA . 270 parts In-Stock

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$89.350

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Nova Conductors

Japan . 650 parts In-Stock

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$120.040

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Vyrian

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Bisco

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Andel Nordic

Denmark . 438 parts In-Stock

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$0.790

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$0.551

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$0.551

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$0.551

Ampacity Inc.

Singapore . 234 parts In-Stock

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$87.140

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Continental Prestige Electronics

USA . 14 parts In-Stock

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$112.510

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Netroflash

USA . 500 parts In-Stock

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$114.038

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$111.637

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Component Stockers USA

USA . 1,458 parts In-Stock

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$122.350

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$113.950

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$113.950

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Microchip USA

USA . 7,151 parts In-Stock

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Authorized Procurement Solutions

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Benley Electronics

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Overview

Maximize power control with the Littelfuse IXBH20N360HV Insulated Gate Bipolar Transistor. As a trusted manufacturer, Littelfuse delivers top-quality products like this N-CHANNEL transistor with built-in diode, perfect for applications requiring high voltage and current handling capabilities. With a maximum VCEsat of 3.4V and a maximum collector-emitter voltage of 3600V, this transistor offers exceptional performance and reliability. Whether you're working on industrial equipment, renewable energy systems, or electric vehicles, the IXBH20N360HV provides the power and efficiency you need to succeed. Experience the benefits of superior technology with Littelfuse.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and high performance for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with built-in diode for easy integration into power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable performance in controlling power output.

Maximum VCEsat: 3.4 V

Low saturation voltage ensures energy efficiency and reduced power loss during operation.

Package Shape: RECTANGULAR

Compact design for easy installation and integration into existing systems.

Terminal Form: THROUGH-HOLE

Ensures secure connections and ease of soldering during installation.

Nominal Turn Off Time (toff): 1285 ns

Fast turn off time for efficient power control and response times.

Maximum Power Dissipation (Abs): 430 W

High power dissipation capability for handling heavy loads and maintaining stable performance.

Package Style (Meter): FLANGE MOUNT

Secure mounting for stability and heat dissipation during operation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in various environments.

Maximum Collector-Emitter Voltage: 3600 V

High voltage handling capacity for use in high-power applications.

Transistor Element Material: SILICON

Silicon material provides high performance and durability for long-term use.

Maximum Gate-Emitter Voltage: 20 V

Suitable voltage level for efficient gate control and operation.

Minimum Operating Temperature: -55 °C

Wide temperature range for operation in extreme conditions.

Maximum Collector Current (IC): 70 A

High collector current rating for handling heavy loads and ensuring stable operation.

Maximum Gate-Emitter Threshold Voltage: 5 V

Optimal threshold voltage for efficient gate control and performance.

Terminal Position: SINGLE

Simplified terminal layout for easy connection and integration.

Case Connection: COLLECTOR

Specific connection point for efficient power transfer and control.

Nominal Turn On Time (ton): 922 ns

Fast turn on time for quick response and power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBH20N360HV attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

3600 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1285 ns

Nominal Turn On Time (ton):

922 ns

Maximum VCEsat:

3.4 V

Trade Compliance

IXBH20N360HV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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