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IXBH42N250

Littelfuse

IXBH42N250 by Littelfuse

IXBH42N250 by Littelfuse is an N-CHANNEL IGBT with 2500V VCE, 104A IC, and 500W power dissipation. Ideal for power control applications, it features a built-in diode, 3V VCEsat, and fast turn-off time of 950ns. Suitable for high-power systems requiring efficient switching capabilities.

Median Price

$48.730

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DigiKey

USA . 488 parts In-Stock

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$48.730

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$34.546

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Mouser Electronics

USA . 218 parts In-Stock

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$48.730

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$34.540

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Verical

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$46.538

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$42.770

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Nova Conductors

Japan . 300 parts In-Stock

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Chip Stock

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Vyrian

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AZTECH Wire

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Aranea Global

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$30.460

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$29.242

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Microchip USA

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Overview

Discover the superior performance and reliability of the Littelfuse IXBH42N250 Insulated Gate Bipolar Transistor. Designed with precision by a trusted manufacturer, this N-CHANNEL transistor with built-in diode is ideal for power control applications. With a maximum VCEsat of 3V and a maximum collector-emitter voltage of 2500V, this transistor offers unmatched power dissipation of 500W. Whether you're looking to enhance efficiency or increase power handling capabilities, the IXBH42N250 delivers exceptional value and benefits to meet your needs. Elevate your projects with this high-quality component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the IGBT, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for efficient power control and performance in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and improves overall reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal power loss and high efficiency during operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering in PCB applications.

Nominal Turn Off Time (toff): 950 ns

Fast turn-off time helps to reduce switching losses and improve overall efficiency.

No. of Terminals: 3

Having 3 terminals allows for easy connectivity and integration into electronic circuits.

Maximum Power Dissipation (Abs): 500 W

High power dissipation enables the IGBT to handle large power loads effectively.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in industrial applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 2500 V

High collector-emitter voltage rating ensures the IGBT can handle high voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability for the transistor element.

Maximum Gate-Emitter Voltage: 25 V

Max gate-emitter voltage ensures safe operation and protection of the IGBT during use.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in cold environments without loss of performance.

Maximum Collector Current (IC): 104 A

High collector current rating enables the IGBT to handle large current flows efficiently.

Maximum Gate-Emitter Threshold Voltage: 5 V

Having a maximum gate-emitter threshold voltage ensures proper gate control for the IGBT.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation in electronic circuits.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation and thermal management.

Nominal Turn On Time (ton): 652 ns

Fast turn-on time helps to improve switching speed and reduce power losses in the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBH42N250 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

950 ns

Nominal Turn On Time (ton):

652 ns

Maximum VCEsat:

3 V

Trade Compliance

IXBH42N250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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