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MIXA60WB1200TEH

IXYS Corporation

MIXA60WB1200TEH by IXYS Corporation

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; Reference Standard: UL RECOGNIZED;

Median Price

$109.670

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 7 parts In-Stock

1+ parts

$109.670

100+ parts

-

1k+ parts

-

10k+ parts

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7

$109.670

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 7 parts In-Stock

1+ parts

$93.220

100+ parts

$90.890

1k+ parts

$90.423

10k+ parts

-

7

$93.220

$90.890

$90.423

-

Microchip USA

USA . 4,422 parts In-Stock

1+ parts

$168.735

100+ parts

-

1k+ parts

-

10k+ parts

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4,422

$168.735

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-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

-

-

-

-

Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,965

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-

-

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Perfect Parts

USA . 6 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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6

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MIXA60WB1200TEH attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X24

No. of Elements:

7

No. of Terminals:

24

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.1 V

Trade Compliance

MIXA60WB1200TEH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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