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S27KL0641DABHV023

Infineon Technologies

S27KL0641DABHV023 by Infineon Technologies

S27KL0641DABHV023 by Infineon Technologies is a 8MX8 memory circuit IC with 67108864 bit memory density. It operates synchronously at a supply voltage range of 2.7V to 3.6V, suitable for industrial applications requiring high-speed and reliable memory storage solutions in compact grid array packages.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,475 parts In-Stock

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1,475

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Digiode

USA . 412 parts In-Stock

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412

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 2,883 parts In-Stock

1+ parts

$5.344

100+ parts

$5.130

1k+ parts

$4.916

10k+ parts

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2,883

$5.344

$5.130

$4.916

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AZTECH Wire

Italy . 716 parts In-Stock

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$5.682

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716

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Ampacity Inc.

Singapore . 1,112 parts In-Stock

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$20.000

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1,112

$20.000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,940 parts In-Stock

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17,940

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Bastille Electronics

Australia . 202 parts In-Stock

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202

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Microchip USA

USA . 173 parts In-Stock

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173

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Corphita

USA . 139 parts In-Stock

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139

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Overview

Discover the cutting-edge S27KL0641DABHV023 by Infineon Technologies, a top-tier manufacturer known for their superior quality and innovative technology. This memory IC is perfect for a wide range of applications due to its synchronous operating mode and industrial-grade temperature tolerance. With a compact design and high memory density, this product offers unmatched reliability and performance. Elevate your projects with the value and benefits that only Infineon Technologies can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and can withstand various environmental conditions, making the product reliable for long-term use.

Surface Mount: YES

Being surface mountable, this product is easy to install on circuit boards, saving space and facilitating automated assembly processes.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and synchronization, improving overall performance of the memory IC.

Nominal Supply Voltage / Vsup (V): 3

The 3V supply voltage is a common standard in electronic devices, making the memory IC compatible with a wide range of systems.

Organization: 8MX8

The 8MX8 organization provides a high memory density and efficient organization of data, increasing the storage capacity and speed of the memory IC.

Temperature Grade: INDUSTRIAL

Designed for industrial environments, this memory IC can operate reliably under harsh conditions such as high temperatures, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the memory IC.

Memory Density: 67108864 bit

With a high memory density of 67108864 bits, this memory IC can store a large amount of data in a compact form factor, making it ideal for devices with limited space.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is specialized for data storage and retrieval, ensuring optimal performance and reliability for memory-intensive applications.

Technical Specifications

Other Function Memory ICs S27KL0641DABHV023 attributes and parameters. Explore more Other Function Memory ICs devices from Infineon Technologies

Specs

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

24

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

S27KL0641DABHV023 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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