Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
IPB60R280P7ATMA1 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 36A and 0.28 ohm RDS(on), suitable for enhancement mode operation. The transistor's GULL WING terminals and small outline package make it easy to mount on PCBs.
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Element14
$3.520
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Verical
$0.896
RS (Exports)
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Rochester
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Digiode
$0.683
IBS Electronics
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$0.610
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Component Stockers USA
$1.020
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$1.157
Modulus Dynamics
$1.670
$1.603
$1.536
Corohmni
Microchip USA
$8.305
RC Electronics
$1.690
$1.500
Continental Prestige Electronics
$1.730
$1.480
Argo Parts USA
Allen Electronics Distributors
$1.205
Perfect Parts
Authorized Procurement Solutions
Aranea Global
Provides durability and reliability for long-term use in various applications.
Offers efficient current flow and low conduction losses, ideal for high performance applications.
Simplifies circuit design and saves space, making it convenient for compact layouts.
Ensures fast switching speeds and high efficiency, suitable for power management systems.
Enables easy installation and soldering on PCBs, saving time and effort in assembly processes.
Provides a high breakdown voltage for robust performance in demanding electrical environments.
Fits neatly in tight spaces and allows for efficient heat dissipation, optimizing overall system performance.
Facilitates secure and reliable connections on the PCB, enhancing the product's stability.
Offers enhanced control over power flow and minimizes power consumption in standby mode.
Handles high current surges effectively, ensuring reliable operation in peak load conditions.
Provides protection against voltage spikes and power surges, enhancing the product's longevity.
Simplifies installation and reduces complexity in circuit design, making it user-friendly.
Saves space on the PCB and allows for efficient heat dissipation, improving overall system reliability.
Offers high-speed performance and low power consumption, suitable for modern electronic devices.
Provides high thermal conductivity and reliability, ensuring stable operation even under high temperatures.
Maintains performance in extreme temperature conditions, suitable for harsh environments.
Enhances solderability and ensures a reliable electrical connection, improving overall product quality.
Minimizes power losses and voltage drops, enhancing the product's efficiency.
Simplifies circuit layout and enhances reliability, ensuring consistent performance throughout the product's lifespan.
Power Field Effect Transistors (FET) IPB60R280P7ATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IPB60R280P7ATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Wafer Site Add 10/Mar/2021
PCN Packaging - Mult Dev Pkg Box Chg 3/Jan/2018
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
1552200253
Molex
WIRE AND CABLE;
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
Terry Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;
ECS-.327-12.5-17X-TR
Ecs International
ECS-0.327-12.5-17X-TR by Ecs International is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing in temperature ranges from -40 to 85 °C, such as telecommunications and industrial automation.
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
Daco Semiconductor
SMBJ18CA
Continental Device India
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NUP2105LT1G
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
BAV99
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
1N4148WS
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Hitano Enterprise
CSD18563Q5A-P
Texas Instruments
CSD18563Q5A-P by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 251A IDM, and 0.0108 ohm Drain-Source On Resistance. With a max operating temperature of 150°C, this MOSFET is suitable for high-power switching tasks in various electronic devices.
FDD4685_F085
Fairchild Semiconductor's FDD4685_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, -55 to 175 °C operating temp range, and 0.027 ohm Drain-Source On Resistance.
IRF640
Unitrode
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
IRF640NPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSL606SNH6327XTSA1
Infineon Technologies
Infineon's BSL606SNH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 18.1A IDM for automotive applications. It features a built-in diode, 0.06 ohm RDS(on), and operates in the -55 to 150°C temperature range, meeting AEC-Q101 standards.
BSC900N20NS3GATMA1
BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
FDMS86263P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Style (Meter): SMALL OUTLINE; Maximum Pulsed Drain Current (IDM): 70 A;
BSC060N10NS3GATMA1/SAMPLE
BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
FDS4559
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .055 ohm;
CSD18543Q3AT
CSD18543Q3AT by Texas Instruments is an N-CHANNEL Power FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 156A Pulsed Drain Current, and 0.0156 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
NTF6P02T3G
NTF6P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35A IDM, and 0.05 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 8.3W.
IRFZ44NS
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
IRF3710STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; JESD-30 Code: R-PSSO-G2;
SI4946BEY-T1-E3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
SQM40P10-40L_GE3
The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
Vishay Intertechnology's SI4946BEY-T1-E3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A IDM, and 0.041 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
IRFP450PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 760 mJ;
FDD4685TF-SB82135
FDD4685TF-SB82135 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 100A IDM, and 0.027 ohm RDS(ON). With ENHANCEMENT MODE operation, it has a max temp of 150°C and AEC-Q101 compliance.
IRF7319TRPBF
IRF7319TRPBF by Infineon is a Power FET with N- and P-channel types. It features 2 separate elements with built-in diode, ideal for switching applications. With a max pulsed drain current of 30A and low on-resistance of 0.029 ohm, it operates in enhancement mode for efficient performance.
NDT3055L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
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IPB64N25S320ATMA1
Infineon's IPB64N25S320ATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 64A max drain current, and 0.02 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and 256A IDM rating.
IPB65R110CFDAATMA1
Infineon's IPB65R110CFDAATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, 99.6A IDM, and 0.11 ohm RDS(on). Ideal for switching applications in automotive (AEC-Q101) due to its high current handling and low on-resistance.
IPB600N25N3GATMA1
IPB600N25N3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style make it suitable for surface mount designs.
IPB65R110CFDATMA1
IPB65R110CFDATMA1 by Infineon is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has a max IDM of 99.6A and EAS of 845mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.11 ohm RDS(ON) and can handle up to 31.2A drain current, making it ideal for high-power electronics.
IPB60R099CPAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE;
IPB65R150CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G2; Maximum Operating Temperature: 150 Cel;
IPB60R099CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 600 V; Avalanche Energy Rating (EAS): 800 mJ;
IPB65R190CFDATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain Current (ID): 17.5 A; Maximum Operating Temperature: 150 Cel;
IPB65R065C7ATMA2
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
IPB60R060P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 151 A; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .06 ohm;
IPB65R190C7ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN; No. of Elements: 1;
IPB65R190CFDAATMA1
Infineon's IPB65R190CFDAATMA1 is a N-CHANNEL FET with 650V DS breakdown voltage, ideal for switching applications. Features include 57.2A pulsed drain current, 484mJ avalanche energy rating, and 0.19 ohm max on-resistance. Suitable for automotive use (AEC-Q101) with a max operating temperature of 150°C.
IPB60R160C6ATMA1
Infineon's IPB60R160C6ATMA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 70A IDM, 0.16 ohm RDS(on), and 497mJ EAS rating. Its small outline package and GULL WING terminals make it suitable for surface mount designs in high-power systems.
IPB60R099C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Terminal Form: GULL WING;
IPB60R120P7ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IPB60R165CPATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
IPB65R099C6ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
IPB60R080P7ATMA1
IPB60R080P7ATMA1 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a built-in diode for switching applications, with 110A IDM and 0.08 ohm RDS(on). Ideal for enhancement mode operation in various power electronics systems.
IPB65R045C7ATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 249 mJ;
IPB60R160C6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 176 W; JEDEC-95 Code: TO-263AB; Maximum Drain-Source On Resistance: .16 ohm;
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