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IPB033N10N5LFATMA1

Infineon Technologies

IPB033N10N5LFATMA1 by Infineon Technologies

Infineon's IPB033N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 480A IDM, and 0.0033 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in enhancement mode operation at temperatures as low as -55°C.

Median Price

$3.562

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 285 parts In-Stock

1+ parts

$2.150

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285

$2.150

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Newark

USA . 225 parts In-Stock

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$2.410

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$2.410

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225

$2.410

$2.410

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Farnell

UK . 3,478 parts In-Stock

1+ parts

$3.690

100+ parts

$2.810

1k+ parts

$1.940

10k+ parts

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3,478

$3.690

$2.810

$1.940

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DigiKey

USA . 2,399 parts In-Stock

1+ parts

$5.290

100+ parts

$2.517

1k+ parts

$1.974

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2,399

$5.290

$2.517

$1.974

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Arrow

USA . 1,009 parts In-Stock

1+ parts

$5.696

100+ parts

$2.756

1k+ parts

$2.155

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1,009

$5.696

$2.756

$2.155

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Mouser Electronics

USA . 2,172 parts In-Stock

1+ parts

$6.540

100+ parts

$3.150

1k+ parts

$2.490

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2,172

$6.540

$3.150

$2.490

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Element14

Singapore . 4,878 parts In-Stock

1+ parts

$9.480

100+ parts

$6.450

1k+ parts

$5.730

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4,878

$9.480

$6.450

$5.730

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Verical

USA . 20,000 parts In-Stock

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$3.121

10k+ parts

$2.865

20,000

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$3.121

$2.865

Avnet

USA . 5,000 parts In-Stock

1+ parts

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$2.135

10k+ parts

$2.033

5,000

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$2.135

$2.033

RS (Exports)

UK . 2,974 parts In-Stock

1+ parts

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$3.435

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2,974

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$3.435

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 26 parts In-Stock

1+ parts

$2.421

100+ parts

$2.037

1k+ parts

$1.956

10k+ parts

$2.935

26

$2.421

$2.037

$1.956

$2.935

Digiode

USA . 247 parts In-Stock

1+ parts

$2.422

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247

$2.422

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Nova Conductors

Japan . 21 parts In-Stock

1+ parts

$4.610

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21

$4.610

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Chip Stock

USA . 13,677 parts In-Stock

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13,677

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Vyrian

USA . 2,297 parts In-Stock

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Bristol Electronics

USA . 314 parts In-Stock

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Atlantic Semiconductor

USA . 314 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 2,545 parts In-Stock

1+ parts

$1.630

100+ parts

$1.589

1k+ parts

$1.581

10k+ parts

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2,545

$1.630

$1.589

$1.581

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Aztec Data Supply Inc.

USA . 47,767 parts In-Stock

1+ parts

$1.945

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47,767

$1.945

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Corphita

USA . 988 parts In-Stock

1+ parts

$2.295

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988

$2.295

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Ampacity Inc.

Singapore . 2,414 parts In-Stock

1+ parts

$3.560

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2,414

$3.560

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$4.518

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$4.337

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50

$4.518

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$4.337

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Modulus Dynamics

Lithuania . 20,448 parts In-Stock

1+ parts

$4.952

100+ parts

$4.754

1k+ parts

$4.556

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20,448

$4.952

$4.754

$4.556

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Corohmni

South Africa . 172 parts In-Stock

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$4.952

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172

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$5.101

100+ parts

$4.846

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$4.846

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200

$5.101

$4.846

$4.846

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Continental Prestige Electronics

USA . 5,011 parts In-Stock

1+ parts

$6.220

100+ parts

$4.120

1k+ parts

$3.010

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5,011

$6.220

$4.120

$3.010

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Component Stockers USA

USA . 11,053 parts In-Stock

1+ parts

$6.390

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$4.250

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$3.110

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11,053

$6.390

$4.250

$3.110

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Microchip USA

USA . 8,420 parts In-Stock

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$23.665

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QUARKTWIN TECHNOLOGY LTD

USA . 26,060 parts In-Stock

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RC Electronics

USA . 6,851 parts In-Stock

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$5.050

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$4.610

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$4.470

6,851

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$4.610

$4.470

Perfect Parts

USA . 3,360 parts In-Stock

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Argo Parts USA

USA . 712 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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GreenTree Electronics

Israel . 47 parts In-Stock

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Overview

Experience superior performance and reliability with the IPB033N10N5LFATMA1 Power FET from Infineon Technologies. As a leading manufacturer in the industry, Infineon ensures top-notch quality and cutting-edge technology in every product. Ideal for a wide range of applications, this N-channel FET offers enhanced efficiency and power management capabilities. With a high DS breakdown voltage and low on-resistance, customers can trust in the value and benefits that this transistor provides. Upgrade your electronic designs today with the IPB033N10N5LFATMA1 and experience the difference Infineon makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the internal components of the FET, ensuring reliable performance and longevity.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher electron mobility compared to P-channel FETs, making them suitable for high-performance applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and labor costs during production.

Minimum DS Breakdown Voltage: 100 V

The high minimum breakdown voltage of 100V ensures reliable operation even in high voltage applications, providing robust protection against electrical faults.

Maximum Pulsed Drain Current (IDM): 480 A

With a high maximum pulsed drain current rating of 480A, this FET can handle large transient loads without overheating or damage, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 273 mJ

The high avalanche energy rating of 273mJ indicates the FET's ability to withstand power surges and voltage spikes, enhancing its reliability in harsh operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and fast switching speeds, making this FET ideal for applications requiring precise control and low power losses.

Maximum Drain Current (ID): 23 A

The high maximum drain current rating of 23A allows the FET to handle substantial continuous loads, making it suitable for high-power circuits and systems.

Maximum Drain-Source On Resistance: 0.0033 ohm

The low drain-source on-resistance of 0.0033 ohm results in minimal power loss and heat generation, improving overall efficiency and performance of the FET.

Technical Specifications

Power Field Effect Transistors (FET) IPB033N10N5LFATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Avalanche Energy Rating (EAS):

273 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

23 A

Maximum Drain-Source On Resistance:

.0033 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

480 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

IPB033N10N5LFATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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