Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Infineon's IPB072N15N3GATMA1 is a N-CHANNEL FET with 150V DS Breakdown Voltage, 400A IDM, and 0.0072 ohm RDS(on). Ideal for SWITCHING applications due to its 300W power dissipation and ENHANCEMENT MODE operation. Suitable for surface mount designs with GULL WING terminals.
Median Price
$2.410
Lifecycle Status
Suppliers In-Stock
23
In-Stock Inventory
1k+
Adafruit Industries
1+ parts
$0.856
100+ parts
$0.779
1k+ parts
$0.702
10k+ parts
-
Chip1Stop
Newark
$4.270
$2.050
$1.750
$1.680
DigiKey
$5.110
$2.407
$2.108
Mouser Electronics
$1.990
Element14
$9.940
$6.740
$6.000
EBV Elektronik
Rochester
$1.720
$1.540
$1.450
Verical
$1.925
$1.813
Arrow
$1.524
$1.509
Future Electronics
$1.390
$1.360
Farnell
$3.520
$3.130
Avnet
$1.168
$1.115
RS (Exports)
$7.516
$5.850
Digiode
$0.813
Nova Conductors
$4.320
NAC Semi
$3.200
$2.910
IBS Electronics
$3.708
$2.538
Vyrian
Chip Stock
J2 Sourcing AB
Rutronik
$1.920
$1.480
ComSIT Distribution GmbH
Semicontronic
$0.730
$0.712
$0.708
Ampacity Inc.
Corphita
$0.770
Advanced Electronics
Modulus Dynamics
$1.037
$0.996
$0.954
Corohmni
$1.159
Aztec Data Supply Inc.
$1.936
Argo Parts USA
$4.136
Netroflash
$4.234
Component Stockers USA
$5.260
$2.940
$2.470
$3.570
Continental Prestige Electronics
$6.290
$4.230
$3.030
Microchip USA
$23.859
Infinite Electronics LLP (Excess)
Eastek
$3.781
GreenTree Electronics
Robosynatics
$0.879
$0.861
Lucentia Tech
Lixinc
Perfect Parts
Epart123
$2.690
iodParts Technologies Inc.
S.R.D Solutions
Futuretech Components
Speed Components Ltd (Excess)
This material provides durability and protection for the FET, making it a reliable choice for various applications.
N-channel FETs offer lower ON-state resistance and higher current carrying capability, making them suitable for high-power applications.
The built-in diode simplifies circuit design and provides reverse current protection, enhancing the efficiency of the system.
Designed for switching applications, this FET offers fast switching speeds and high efficiency, making it ideal for power management.
The surface mount capability allows for easy PCB assembly and space-saving design, making it suitable for compact electronic devices.
With a high breakdown voltage, this FET can withstand high voltage spikes, ensuring reliable operation in demanding conditions.
The rectangular shape provides a compact footprint, making it suitable for densely packed PCB layouts.
The gull-wing terminals offer secure connections and easy soldering, ensuring reliable electrical contact.
Enhancement mode FETs offer low ON-state resistance and high switching speeds, making them efficient for various power management applications.
With a high pulsed drain current rating, this FET can handle short-term peak loads, making it suitable for high-power applications.
The high avalanche energy rating ensures the FET can withstand voltage spikes without failure, improving system reliability.
With a high drain current rating, this FET can handle high current loads without overheating, making it suitable for power applications.
The two-terminal design simplifies circuit connections and reduces assembly complexity, making it easy to integrate into various systems.
With a high power dissipation rating, this FET can handle high power levels without overheating, ensuring reliable operation in demanding conditions.
The small outline package style saves space on the PCB and allows for compact system designs, making it suitable for portable devices.
MOSFET technology offers high switching speeds and low ON-resistance, making it ideal for efficient power switching applications.
With a high operating temperature rating, this FET can withstand elevated temperatures, ensuring reliable performance in harsh environments.
Silicon-based FETs offer high thermal conductivity and electrical performance, making them suitable for a wide range of applications.
The TIN terminal finish provides corrosion resistance and low contact resistance, ensuring long-term reliability in various environments.
With low ON-resistance, this FET minimizes power losses and improves efficiency in power management applications.
The single terminal position simplifies circuit connections and saves space on the PCB, making it suitable for compact designs.
The drain case connection simplifies circuit design and ensures reliable electrical connections, making it easy to integrate into various systems.
Power Field Effect Transistors (FET) IPB072N15N3GATMA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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IPB072N15N3GATMA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Other - Multiple Changes 09/Jul/2014
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
STMicroelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
L7805CV
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
NE555D
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Silicon Standard
KSZ9031RNXIA
Microchip Technology
KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555DR
NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
NX3008NBKW,115
NXP Semiconductors
NX3008NBKW,115 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.35A and power dissipation of 0.31W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C such as power management systems.
IRF3205ZSPBF
IRF3205ZSPBF by Infineon is an N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 440A and EAS of 180mJ, operating in ENHANCEMENT MODE. With a Drain Current of 75A and 0.0065 ohm On Resistance, it offers high power dissipation up to 170W in a SMALL OUTLINE package.
BSP716NH6327XTSA1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
IRF9310TRPBF
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Qualification: Not Qualified; Maximum Drain Current (Abs) (ID): 20 A;
IRF640PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
NTR4501NT1G
Onsemi
NTR4501NT1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
IRF4905PBF
IRF4905PBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage and 260A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 200W and operates in the temperature range of -55 to 175°C.
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
IPB200N25N3GATMA1
Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.
FQD12N20LTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;
FQA36P15
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Minimum DS Breakdown Voltage: 150 V; Qualification: Not Qualified;
SUM90P10-19L-E3
Vishay Intertechnology
Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.
SI7611DN-T1-GE3
Vishay Intertechnology's SI7611DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 40V DS breakdown voltage, 20A pulsed drain current, and 0.025 ohm max drain-source resistance. Ideal for high-power applications requiring efficient switching with a max power dissipation of 39W in a small outline package.
CSD18563Q5A
CSD18563Q5A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 96A IDM, and 0.0108 ohm RDS(on). With a max power dissipation of 116W, it operates in temperatures ranging from -55 to 150 °C.
NDT3055L
NDT3055L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 25A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package. Operating from -65 to 150 °C, it has 0.1 ohm Drain-Source Resistance and 3W Power Dissipation.
NDS7002A_NB9GGTXA
Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
NX3008NBK,215
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
FDS8949
FDS8949 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 20A IDM. It features SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE configuration, suitable for applications requiring high power dissipation in small outline packages. Ideal for enhancing performance in electronic devices operating at temperatures up to 150°C.
IRF640STRRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 18 A;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FDMT800150DC
IPB017N10N5LFATMA1
Infineon's IPB017N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation of 313W and wide operating temperature range (-55 to 150 °C).
IPB010N06NATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IPB020N10N5ATMA1
Infineon's IPB020N10N5ATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.002 ohm RDS(on), and 120A ID. Ideal for switching applications due to its 480A IDM and built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
IPB020N10N5LFATMA1
Infineon's IPB020N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.002 ohm RDS(on), and 480A IDM. Ideal for power applications, it operates in Enhancement Mode with 979mJ EAS rating. Suitable for surface mount designs, this MOSFET features a built-in diode and can handle high drain currents up to 29A.
IPB017N10N5ATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 180 A; Terminal Form: GULL WING;
IPB025N10N3GATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 100 V; Package Body Material: PLASTIC/EPOXY;
IPB073N15N5ATMA1
Infineon's IPB073N15N5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0073 ohm RDS(on), and 114A ID. Ideal for switching applications, it features a built-in diode, 456A IDM, and 130mJ EAS rating. Suitable for enhancement mode operation in various power electronics systems.
IPB019N08N3GATMA1
Infineon's IPB019N08N3GATMA1 is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 720A IDM, 1430mJ EAS, and 0.0019 ohm RDS(ON). Operating in ENHANCEMENT MODE at up to 175°C, it has GULL WING terminals in a SMALL OUTLINE package.
IPB042N10N3GATMA1
Infineon's IPB042N10N3GATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.0042 ohm RDS(on), and 400A IDM. Ideal for switching applications, it operates in enhancement mode with a max temp of 175°C.
IPB015N08N5ATMA1
Infineon Technologies' IPB015N08N5ATMA1 is a power FET with N-channel configuration and built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 80V and max pulsed drain current of 720A. Its small outline package and low on-resistance make it ideal for various power management systems.
IPB014N06NATMA1
Infineon's IPB014N06NATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 34A Max Drain Current, 0.0014 ohm Max RDS(on), and 720A IDM. Its METAL-OXIDE SEMICONDUCTOR tech and built-in diode make it suitable for high-power operations in compact designs.
IPB017N10N5LF
Infineon's IPB017N10N5LF is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems.
IPB072N15N3GXT
IPB072N15N3GXT by Infineon is a N-CHANNEL FET with 150V DS Breakdown Voltage, 400A IDM, and 0.0072 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates at up to 175°C and has a built-in DIODE, making it suitable for high-power requirements.
IPB027N10N3GATMA1
Infineon's IPB027N10N3GATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 480A IDM, 175°C Max Operating Temp, and 0.0027 ohm Drain-Source Resistance. Its GULL WING terminals and ENHANCEMENT MODE make it suitable for various power electronics designs.
IPB081N06L3GATMA1
Infineon's IPB081N06L3GATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 43mJ EAS, and 0.0081 ohm RDS(ON). With a max power dissipation of 79W and operating temp up to 175°C, it offers high performance in a small outline package.
IPB048N15N5LFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 313 W; Avalanche Energy Rating (EAS): 30 mJ; Maximum Drain Current (Abs) (ID): 120 A;
IPB033N10N5LFATMA1
Infineon's IPB033N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 480A IDM, and 0.0033 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in enhancement mode operation at temperatures as low as -55°C.
IPB036N12N3GATMA1
Infineon's IPB036N12N3GATMA1 is a N-CHANNEL FET with 120V DS breakdown voltage, ideal for switching applications. Featuring a max ID of 180A and 0.0036 ohm RDS(on), it operates in enhancement mode with 175°C max temp. Its GULL WING terminals and built-in diode make it suitable for high-power circuit designs.
IPB065N15N3GATMA1
Infineon's IPB065N15N3GATMA1 is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 520A IDM, 0.0065 ohm RDS(on), and 175°C Max Operating Temp. Suitable for high-power switching circuits in various electronic devices.
Supply Digital Components
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$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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