Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Transistor Application: GENERAL PURPOSE; Transistor Element Material: SILICON;
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Insulated Gate Bipolar Transistors (IGBT) FZ800R16KF4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Maximum Collector Current (IC):
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FZ800R16KF4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
1552200253
Molex
WIRE AND CABLE;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
EU2B-YS3203C
Idec
ROTARY SWITCH;
BSS138
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
MBRS130LT3G
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Lite-on Semiconductor
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Config: SINGLE; No. of Phases: 1; No. of Elements: 1;
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
LM358AN
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
CM200DY-12NF
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified;
IXXN110N65C4H1
Littelfuse
IXXN110N65C4H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 210A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
IXXX160N65B4
IXYS Corporation
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 310 A; Transistor Element Material: SILICON;
FS400R07A1E3
Infineon Technologies
FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.
IKP40N65F5XKSA1
IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
IRG4BC30KPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 42 W; Maximum Collector Current (IC): 28 A; Case Connection: COLLECTOR;
IXGR32N170H1
IXGR32N170H1 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 38A IC, and 200W Ptot. Ideal for power control applications, it features a single configuration with built-in diode and operates up to 150°C.
APT100GN60LDQ4G
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 229 A; Package Shape: RECTANGULAR;
FS400R07A1E3S7BOMA1
Infineon FS400R07A1E3S7BOMA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. Ideal for power control applications, it has VCEsat of 1.7V, IC of 500A, and Pmax of 1250W. Operates b/w -40 to 150°C with ton at 220ns and toff at 540ns.
FS25R12KE3GBOSA1
FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
STGW19NC60HD
STMicroelectronics
STGW19NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 42A IC, and 140W Ptot. It's used for power control applications due to its fast turn-off time of 272ns and built-in diode in a rectangular package with through-hole terminals.
FS150R12KT3BOSA1
Infineon FS150R12KT3BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current rating of 200A, and turn-off time of 610ns. Ideal for high-power applications requiring fast switching such as motor drives and power supplies.
FS200R12KT4RBOSA1
Infineon's FS200R12KT4RBOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and operating temperature up to 175°C.
IRG4BC40SPBF
IRG4BC40SPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 60A max collector current. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 1940ns and turn-on time of 44ns, it offers efficient performance in high-power systems.
IXDH30N120D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 435 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
AIKW20N60CTXKSA1
Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
IKY40N120CS6XKSA1
IKY40N120CS6XKSA1 by Infineon: N-Channel IGBT with VCEsat of 2.15V, IC of 80A, and Pdiss of 500W. Ideal for high-power applications like motor drives and renewable energy systems due to its high voltage rating and fast switching times.
IXXX200N60C3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 340 A; Terminal Finish: Matte Tin (Sn);
SGW20N60
Infineon Technologies' SGW20N60 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 40A max collector current. Ideal for motor control applications, it has a rise time of 46ns, fall time of 65ns, and turn-off time of 313ns. Package style is flange mount with through-hole terminals.
FF1400R12IP4BOSA1
FF1400R12IP4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and turn-off time of 1200ns. Ideal for power control applications due to its SILICON material and operating temperature up to 175°C.
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FZ800R45KL3B5NOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9000 W; Minimum Operating Temperature: -50 Cel; JESD-30 Code: R-PUFM-X7;
FZ800R12KL4C
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5600 W; Maximum Collector Current (IC): 1300 A; Package Shape: RECTANGULAR;
FZ800R33KL2C
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9800 W; Maximum Collector Current (IC): 1500 A; Package Body Material: UNSPECIFIED;
FZ800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ800R33KF2C
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FZ800R12KS4B2NOSA1
FZ800R12KS4B2NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1200A max collector current. It has a complex configuration, 660ns turn-off time, and 225ns turn-on time. Ideal for high-power applications requiring fast switching capabilities in industrial equipment and power electronics systems.
FZ800R33KL2C_B5
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9800 W; Maximum Collector Current (IC): 1500 A; Terminal Form: UNSPECIFIED;
FZ800R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Nominal Turn Off Time (toff): 1000 ns; JESD-30 Code: R-XUFM-X4;
FZ800R12KL4CNOSA1
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1300 A; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
FZ800R17KF6B2
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 7300 W; Maximum Collector Current (IC): 1600 A; Maximum Collector-Emitter Voltage: 1700 V; Maximum VCEsat: 3.2 V; Maximum Operating Temperature: 125 Cel;
FZ800R17KF6CB2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Maximum Collector-Emitter Voltage: 1700 V;
FZ800R33KF2B5
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 3300 V; Maximum VCEsat: 4.25 V;
FZ800R12KS4_B2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 7600 W; Maximum Collector Current (IC): 1200 A; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ800R33KF2CNOSA1
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1300 A; No. of Terminals: 7;
FZ800R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 7;
FZ800R17KF6CB2NOSA1
N-Channel; Maximum Power Dissipation (Abs): 6600 W; Maximum Collector Current (IC): 1300 A; Nominal Turn Off Time (toff): 1220 ns; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: ISOLATED;
FZ800R12KE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3550 W; Maximum Collector Current (IC): 1200 A; Package Body Material: UNSPECIFIED;
FZ800R12KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Shape: RECTANGULAR; Terminal Form: UNSPECIFIED;
FZ800R12KS4
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 6900 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 1; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 3.7 V;
FZ800R16KF1
Eupec & Kg
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6250 W; Maximum Collector Current (IC): 800 A; Maximum VCEsat: 3.5 V;
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