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F4-150R12KS4

Infineon Technologies

F4-150R12KS4 by Infineon Technologies

F4-150R12KS4 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max VCEsat of 3.75V, IC of 180A, and can handle up to 1200V. Ideal for high-power applications requiring fast switching speeds and efficient power dissipation.

Median Price

$163.500

Lifecycle Status

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< 1k

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Mouser Electronics

USA . 8 parts In-Stock

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Digiode

USA . 59 parts In-Stock

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Vyrian

USA . 450 parts In-Stock

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$177.120

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Modulus Dynamics

Lithuania . 10,841 parts In-Stock

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$1.808

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$1.736

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$1.663

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Corphita

USA . 909 parts In-Stock

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Overview

Elevate your power management solutions with the F4-150R12KS4 IGBT from Infineon Technologies. Designed with precision and reliability in mind, this N-CHANNEL insulated gate bipolar transistor boasts a BRIDGE configuration with 4 elements, built-in diode, and thermistor for seamless operation. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 180A, this product delivers exceptional performance for a wide range of applications. Experience unparalleled efficiency and durability with the F4-150R12KS4 - the perfect choice for your power management needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have faster switching speeds and lower conduction losses, making them a good choice for high efficiency applications.

Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

The built-in diode and thermistor help simplify circuit design and provide additional protection features, making this IGBT ideal for bridge applications.

Maximum VCEsat: 3.75 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter terminals when the IGBT is conducting, leading to lower power dissipation and higher efficiency.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating allows this IGBT to be used in applications requiring high voltage switching capabilities.

Maximum Power Dissipation (Abs): 960 W

With a high power dissipation rating, this IGBT can handle large amounts of power without overheating, ensuring reliable operation.

Nominal Turn Off Time (toff): 390 ns

The fast turn-off time helps reduce switching losses and improve efficiency in high-frequency applications.

Maximum Gate-Emitter Voltage: 20 V

The low maximum gate-emitter voltage simplifies the driver circuit design and ensures reliable operation of the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) F4-150R12KS4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X26

No. of Elements:

4

No. of Terminals:

26

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

190 ns

Maximum VCEsat:

3.75 V

Trade Compliance

F4-150R12KS4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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