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BFP540H6327XTSA1

Infineon Technologies

BFP540H6327XTSA1 by Infineon Technologies

BFP540H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 30 GHz. It has a collector-emitter voltage of 4.5V and collector current of 0.08A, making it suitable for L Band amplifier applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.247

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.611

100+ parts

$0.556

1k+ parts

$0.501

10k+ parts

-

500

$0.611

$0.556

$0.501

-

Rochester

USA . 1,166,293 parts In-Stock

1+ parts

-

100+ parts

$0.247

1k+ parts

$0.205

10k+ parts

$0.183

1,166,293

-

$0.247

$0.205

$0.183

Verical

USA . 710,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.228

710,990

-

-

-

$0.228

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 320 parts In-Stock

1+ parts

$0.192

100+ parts

-

1k+ parts

-

10k+ parts

-

320

$0.192

-

-

-

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.369

100+ parts

-

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-

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550

$0.369

-

-

-

Chip Stock

USA . 32,030 parts In-Stock

1+ parts

-

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32,030

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-

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Vyrian

USA . 6,558 parts In-Stock

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6,558

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VNN

France . 745 parts In-Stock

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745

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 97,213 parts In-Stock

1+ parts

$0.172

100+ parts

-

1k+ parts

-

10k+ parts

-

97,213

$0.172

-

-

-

Corphita

USA . 860 parts In-Stock

1+ parts

$0.182

100+ parts

-

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860

$0.182

-

-

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Component Stockers USA

USA . 202,265 parts In-Stock

1+ parts

$0.210

100+ parts

$0.200

1k+ parts

$0.180

10k+ parts

$0.180

202,265

$0.210

$0.200

$0.180

$0.180

Modulus Dynamics

Lithuania . 775 parts In-Stock

1+ parts

$0.403

100+ parts

$0.387

1k+ parts

$0.371

10k+ parts

-

775

$0.403

$0.387

$0.371

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.611

100+ parts

$0.556

1k+ parts

$0.501

10k+ parts

-

500

$0.611

$0.556

$0.501

-

AZTECH Wire

Italy . 1,021 parts In-Stock

1+ parts

$18.880

100+ parts

-

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10k+ parts

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1,021

$18.880

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-

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Andel Nordic

Denmark . 4,506 parts In-Stock

1+ parts

$35.050

100+ parts

-

1k+ parts

$24.538

10k+ parts

$24.538

4,506

$35.050

-

$24.538

$24.538

Epart123

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.310

30,000

-

-

-

$0.310

RC Electronics

USA . 21,600 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

$0.380

10k+ parts

$0.370

21,600

-

$0.400

$0.380

$0.370

Perfect Parts

USA . 14,204 parts In-Stock

1+ parts

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14,204

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.362

1k+ parts

$0.351

10k+ parts

$0.343

1,000

-

$0.362

$0.351

$0.343

Overview

Unleash the power of superior performance with the BFP540H6327XTSA1 by Infineon Technologies. As a leader in RF Small Signal Bipolar Junction Transistors, Infineon Technologies delivers unmatched quality and reliability. This NPN transistor, designed for amplifier applications in the L Band frequency range, offers customers exceptional value and benefits. With its small outline package and high transition frequency of 30,000 MHz, the BFP540H6327XTSA1 is the perfect choice for demanding RF applications where precision and efficiency are paramount. Elevate your designs with this cutting-edge technology from Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for portable applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for easy integration with other NPN components in the circuit, offering flexibility in design.

Configuration: SINGLE

The single configuration simplifies the circuit layout, making it easier to troubleshoot and maintain.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

The surface-mount capability saves space on the PCB and enables automated assembly, increasing productivity.

Package Shape: RECTANGULAR

The rectangular shape fits well within tight spaces on the PCB, maximizing board real estate efficiency.

Terminal Form: GULL WING

The gull-wing terminals provide strong mechanical stability and excellent heat dissipation, enhancing the overall reliability of the product.

Highest Frequency Band: L BAND

Operating in the L band frequency range, this transistor is suitable for various communication and radar applications.

No. of Terminals: 4

The 4 terminals offer connectivity options and flexibility in circuit design, catering to a wide range of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high component density on the PCB.

Maximum Collector-Base Capacitance: 0.24 pF

The low collector-base capacitance minimizes signal distortion and improves overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 4.5 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels, increasing its versatility in different circuits.

Transistor Element Material: SILICON

Silicon offers superior performance, reliability, and efficiency compared to other materials, making this transistor a reliable choice.

Maximum Collector Current (IC): 0.08 A

The high collector current rating allows for efficient power handling, ensuring stability and reliability in demanding applications.

Terminal Finish: TIN

The tin terminal finish provides excellent solderability and corrosion resistance, extending the product's lifespan and performance.

Terminal Position: DUAL

The dual terminal position allows for versatile PCB mounting options and easy integration into various circuit layouts.

Case Connection: EMITTER

The emitter case connection simplifies circuit design and ensures proper grounding for enhanced performance.

Reference Standard: AEC-Q101

Compliant with the AEC-Q101 automotive standard, this product meets strict quality and reliability requirements for automotive applications.

Nominal Transition Frequency (fT): 30000 MHz

With a high transition frequency, this transistor delivers fast response times and high-speed performance, ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFP540H6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.24 pF

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFP540H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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