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HGTP12N60C3R

Harris Semiconductor

HGTP12N60C3R by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 24 A; No. of Elements: 1;

Median Price

$1.538

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Rochester

USA . 2,724 parts In-Stock

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$1.480

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$1.230

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$1.090

2,724

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$1.480

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$1.090

DigiKey

USA . 2,724 parts In-Stock

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$1.540

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2,724

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Verical

USA . 2,724 parts In-Stock

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$1.538

10k+ parts

$1.363

2,724

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$1.363

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Digiode

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462

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Vyrian

USA . 168 parts In-Stock

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168

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Corphita

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843

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Microchip USA

USA . 5,759 parts In-Stock

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$7.540

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5,759

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Supply Digital

USA . 1,206 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTP12N60C3R attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS, ULTRA FAST SWITCHING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

290 ns

Nominal Turn On Time (ton):

36 ns

Trade Compliance

HGTP12N60C3R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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