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HGT1S10N120BNS9A

Harris Semiconductor

HGT1S10N120BNS9A by Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 668 parts In-Stock

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668

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Digiode

USA . 331 parts In-Stock

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331

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Supply Digital

USA . 4,575 parts In-Stock

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4,575

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Corphita

USA . 460 parts In-Stock

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460

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGT1S10N120BNS9A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Harris Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

190 ns

Nominal Turn On Time (ton):

21 ns

Trade Compliance

HGT1S10N120BNS9A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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