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MR25H40CDCR

Everspin Technologies

MR25H40CDCR by Everspin Technologies

MR25H40CDCR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating from -40 to 85°C. It features synchronous operation, small outline package, and industrial temperature grade. Ideal for applications requiring fast non-volatile memory with high endurance and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,036 parts In-Stock

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8,036

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Sensible Micro Corp

USA . 1,430 parts In-Stock

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1,430

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Nova Conductors

Japan . 600 parts In-Stock

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600

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AZTECH Wire

Italy . 356 parts In-Stock

1+ parts

$18.252

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356

$18.252

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Continental Prestige Electronics

USA . 6,716 parts In-Stock

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Argo Parts USA

USA . 3,439 parts In-Stock

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Bastille Electronics

Australia . 800 parts In-Stock

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Overview

Revolutionize your data storage with the MR25H40CDCR from Everspin Technologies. As a leading manufacturer in the MRAM category, Everspin ensures top-notch quality and reliability in all their products. With its synchronous operating mode and industrial temperature grade, this MRAM offers unmatched performance and durability for a wide range of applications. Say goodbye to data loss and experience lightning-fast access speeds with the MR25H40CDCR. Upgrade your systems today and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is a common standard, making it compatible with a wide range of systems and devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and precise data transfer, essential for applications where timing is critical.

Memory Density: 4194304 bit

With a high memory density of 4194304 bits, this MRAM offers ample storage space for data-intensive applications.

Technical Specifications

MRAMs MR25H40CDCR attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.05 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Trade Compliance

MR25H40CDCR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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