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MR4A16BUYS45

Everspin Technologies

MR4A16BUYS45 by Everspin Technologies

Everspin Technologies' MR4A16BUYS45 is a 1MX16 MRAM with 3.3V supply voltage, 125°C operating temp, and 45ns access time. Ideal for automotive applications due to its small outline package and high memory density of 16Mbit. Offers fast write cycle time of 0.000045ms and low standby current of 0.009A for efficient data retention.

Median Price

$79.900

Lifecycle Status

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6

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1k+

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Verical

USA . 108 parts In-Stock

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$50.350

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DigiKey

USA . 472 parts In-Stock

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$79.900

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$69.546

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$67.589

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Mouser Electronics

USA . 63 parts In-Stock

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$79.900

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$69.510

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$67.540

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63

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Avnet

USA . 108 parts In-Stock

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Vyrian

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Nova Conductors

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Aztec Data Supply Inc.

USA . 4,446 parts In-Stock

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$4.200

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AZTECH Wire

Italy . 471 parts In-Stock

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$14.037

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Authorized Procurement Solutions

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Elevate your technology with the MR4A16BUYS45 by Everspin Technologies. As a leader in MRAM technology, Everspin delivers top-quality products that are perfect for a wide range of applications. With its small outline and thin profile package style, this MRAM offers high performance in a compact design. From automotive to industrial uses, this MRAM provides reliable data storage with fast access times. Experience the value of cutting-edge technology with the MR4A16BUYS45 from Everspin Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the MRAMs lightweight and cost-effective.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent operation of the memory cells, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with standard electronic systems.

Memory Density: 16777216 bit

With a high memory density of 16777216 bits, this MRAM offers ample storage capacity for data-intensive applications.

Maximum Write Cycle Time (tWC): 0.000045 ms

The extremely fast maximum write cycle time of 0.000045 ms provides quick and reliable data programming.

Technical Specifications

MRAMs MR4A16BUYS45 attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

45 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G54

Length:

22.22 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

54

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000045 ms

Trade Compliance

MR4A16BUYS45 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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