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MR4A16BCYS35R

Everspin Technologies

MR4A16BCYS35R by Everspin Technologies

Everspin Technologies' MR4A16BCYS35R is a 1MX16 MRAM with 3.3V supply, operating at -40 to 85 °C. It features a parallel interface, 0.8mm terminal pitch, and 35ns access time. Ideal for industrial applications requiring fast and reliable non-volatile memory solutions.

Median Price

$56.910

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 978 parts In-Stock

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$56.910

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$48.360

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$44.380

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DigiKey

USA . 3 parts In-Stock

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$56.910

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$48.353

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$44.376

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Nova Conductors

Japan . 31 parts In-Stock

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Chip Stock

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Vyrian

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Advanced Electronics

New Zealand . 311 parts In-Stock

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$2.719

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$2.583

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Aztec Data Supply Inc.

USA . 4,722 parts In-Stock

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$3.410

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Continental Prestige Electronics

USA . 5,826 parts In-Stock

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$38.520

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$37.750

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Netroflash

USA . 1,000 parts In-Stock

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$39.290

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$37.326

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$36.540

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QUARKTWIN TECHNOLOGY LTD

USA . 13,714 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

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Overview

Experience the cutting-edge technology of Everspin Technologies with the MR4A16BCYS35R MRAM. This high-quality memory module offers unparalleled speed and reliability in a compact package, making it ideal for industrial applications where data integrity is critical. With a wide operating temperature range and low power consumption, this MRAM delivers exceptional performance in demanding environments. Trust Everspin Technologies to provide innovative solutions that enhance your products and elevate your business to new heights. Choose the MR4A16BCYS35R for a superior memory solution that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this MRAM lightweight and durable, ideal for portable and rugged applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility in accessing and writing data, making this MRAM suitable for various types of systems and applications.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with common voltage levels in electronic systems.

Organization: 1MX16

With an organization of 1MX16, this MRAM offers a high memory capacity of 1 megabyte organized in a 16-bit width, suitable for storing large amounts of data efficiently.

Technology: CMOS

The CMOS technology used in this MRAM provides low power consumption, high speed, and compatibility with a wide range of systems, making it a reliable and efficient choice.

Maximum Access Time: 35 ns

The fast access time of 35 nanoseconds ensures quick read and write operations, enhancing the overall performance of the MRAM in time-sensitive applications.

Technical Specifications

MRAMs MR4A16BCYS35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

54

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A16BCYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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