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MR4A16BCYS35

Everspin Technologies

MR4A16BCYS35 by Everspin Technologies

Everspin Technologies' MR4A16BCYS35 is a 1MX16 MRAM with 3.3V supply, operating at -40 to 85°C. Featuring a parallel interface, it offers fast access time of 35ns and low standby current of 0.009Amp. Ideal for industrial applications requiring high-speed non-volatile memory solutions in a compact form factor.

Median Price

$46.820

Lifecycle Status

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12

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Arrow

USA . 514 parts In-Stock

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$33.260

100+ parts

$32.270

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$31.950

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$33.260

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Future Electronics

Canada . 540 parts In-Stock

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$37.300

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$35.530

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DigiKey

USA . 1,597 parts In-Stock

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$56.340

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$49.115

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$47.739

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Mouser Electronics

USA . 824 parts In-Stock

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$56.350

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$49.120

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$47.740

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$56.350

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Chip1Stop

Japan . 216 parts In-Stock

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Verical

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Nova Conductors

Japan . 20 parts In-Stock

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$38.893

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Chip Stock

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Component Sense

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NAC Semi

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Vyrian

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Right Parts Inc.

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Aztec Data Supply Inc.

USA . 3,869 parts In-Stock

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$2.930

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Microchip USA

USA . 2,090 parts In-Stock

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$37.690

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$37.690

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$37.690

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Continental Prestige Electronics

USA . 5,938 parts In-Stock

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$38.893

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$38.115

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Netroflash

USA . 2,000 parts In-Stock

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$38.893

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$36.948

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$36.170

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$36.170

QUARKTWIN TECHNOLOGY LTD

USA . 18,944 parts In-Stock

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Argo Parts USA

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RC Electronics

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Perfect Parts

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Futuretech Components

Singapore . 500 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

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Overview

Looking for a cutting-edge memory solution? Look no further than the MR4A16BCYS35 by Everspin Technologies. This MRAM offers unparalleled quality and reliability, thanks to its industry-leading manufacturer. Ideal for industrial applications, this MRAM boasts fast access times and low power consumption, making it a cost-effective choice for your projects. Upgrade to the MR4A16BCYS35 today and experience the benefits of advanced memory technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, perfect for portable devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for flexible and independent access to memory locations, increasing efficiency in data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of systems and makes integration seamless.

Memory IC Type: MRAM

The MRAM technology offers fast read and write speeds, high endurance, and non-volatility, making it a reliable choice for data storage.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, the product can withstand extended use in industrial settings without compromising performance.

Technical Specifications

MRAMs MR4A16BCYS35 attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G54

JESD-609 Code:

e3

Length:

22.22 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

54

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP54,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A16BCYS35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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