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MR4A08BYS35R

Everspin Technologies

MR4A08BYS35R by Everspin Technologies

Everspin Technologies' MR4A08BYS35R is a 2MX8 MRAM with 3.3V supply, operating at -40 to 70°C. It features a small outline package, GULL WING terminals, and parallel interface. Ideal for applications requiring fast access times and high reliability in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,278 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 374 parts In-Stock

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$9.838

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Continental Prestige Electronics

USA . 6,581 parts In-Stock

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Argo Parts USA

USA . 2,289 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the future of data storage with Everspin Technologies' MR4A08BYS35R MRAM. This cutting-edge memory technology offers unparalleled speed, reliability, and energy efficiency in a sleek rectangular package. Perfect for a wide range of applications, from industrial automation to automotive systems, this MRAM delivers lightning-fast performance with a nominal supply voltage of 3.3V. Trust Everspin Technologies, a leader in innovative memory solutions, to provide you with a top-of-the-line product that will revolutionize your data storage capabilities. Say goodbye to slow access times and hello to a new era of efficiency with the MR4A08BYS35R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the MRAMs easy to handle and resistant to damage during handling and transportation.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, saving time and effort during the assembly process.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode enables faster data processing and access times, making the MRAMs suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of electronic systems and reduces the risk of damage due to overvoltage.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems, making the MRAMs energy-efficient and reliable.

Maximum Access Time: 35 ns

The fast access time of 35 nanoseconds ensures quick read and write operations, making the MRAMs ideal for applications that require high-speed data processing.

Technical Specifications

MRAMs MR4A08BYS35R attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

R-PDSO-G44

Length:

18.41 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.009 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10.16 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR4A08BYS35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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