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MR25H40VDFR

Everspin Technologies

MR25H40VDFR by Everspin Technologies

MR25H40VDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 105 °C. It features synchronous mode, small outline package, and CMOS technology. Ideal for industrial applications requiring fast non-volatile memory with 4194304-bit density.

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2

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1k+

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Vyrian

USA . 4,313 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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AZTECH Wire

Italy . 348 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Unlock the power of cutting-edge MRAM technology with Everspin Technologies' MR25H40VDFR. Designed for industrial applications, this MRAM offers unparalleled reliability and performance in a compact package. With a high memory density of 4194304 bits and a wide operating temperature range, this product is ideal for demanding environments where data retention and fast write speeds are crucial. Trust Everspin Technologies to deliver innovative solutions that exceed your expectations. Experience the difference with the MR25H40VDFR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making this MRAM a reliable choice for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving time and effort during assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization, enhancing overall system performance.

Nominal Supply Voltage: 3.3V

Operates at a standard supply voltage of 3.3V, compatible with many electronic devices and systems.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this MRAM can reliably function in harsh environments or under heavy load conditions.

Organization: 512KX8

Organized as 512K words of 8 bits each, providing a good balance between memory capacity and data width for diverse applications.

Memory IC Type: MRAM

Utilizes MRAM technology, offering fast read and write speeds, low power consumption, and non-volatility, making it an efficient choice for memory storage.

Technical Specifications

MRAMs MR25H40VDFR attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H40VDFR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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