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MR25H40CDFR

Everspin Technologies

MR25H40CDFR by Everspin Technologies

MR25H40CDFR by Everspin Technologies is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 85°C. It features synchronous mode, small outline package, and industrial temperature grade. Ideal for applications requiring fast and non-volatile memory solutions in compact form factors.

Median Price

$25.940

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,047 parts In-Stock

1+ parts

$25.940

100+ parts

$22.140

1k+ parts

$20.320

10k+ parts

$19.660

3,047

$25.940

$22.140

$20.320

$19.660

Distributors (In-Stock)

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Chip Stock

USA . 9,830 parts In-Stock

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Vyrian

USA . 2,494 parts In-Stock

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NexGen Digital

USA . 2,001 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$5.878

100+ parts

$5.584

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$5.584

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$5.878

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$5.584

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Argo Parts USA

USA . 2,374 parts In-Stock

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Continental Prestige Electronics

USA . 2,369 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of the MR25H40CDFR by Everspin Technologies, a leading manufacturer in the field of MRAMs. This cutting-edge memory product offers unmatched performance and endurance for a wide range of applications, making it an essential component for industrial-grade projects. With a focus on innovation and efficiency, Everspin Technologies has crafted a product that delivers exceptional value and benefits to customers looking for top-notch memory solutions. Choose the MR25H40CDFR for superior performance and peace of mind in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the MRAM, making it a reliable choice.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation of the MRAM, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility in installation and integration, making it compatible with a wide range of devices and systems.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and synchronized data transfer, enhancing the overall performance of the MRAM.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides efficient power consumption and compatibility with standard voltage requirements.

Power Supplies (V): 3.3

With a power supply of 3.3V, the MRAM offers stable and reliable operation for various applications.

No. of Terminals: 8

The MRAM with 8 terminals provides versatile connectivity options, allowing for easy integration into different systems.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style offers space-saving benefits and efficient heat dissipation for optimal performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable operation in challenging environments and industrial applications.

Organization: 512KX8

The organization of 512KX8 provides ample storage capacity and efficient data retrieval for enhanced functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the MRAM to perform reliably in extreme cold conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in connection options and facilitates easy installation in various systems.

Maximum Seated Height: 0.9 mm

The maximum seated height of 0.9mm ensures a compact design for space-constrained applications.

Width: 5 mm

The width of 5mm provides a slim profile for the MRAM, allowing for easy integration into tight spaces.

Minimum Supply Voltage (Vsup): 3 V

The minimum supply voltage of 3V ensures stable operation and power efficiency for the MRAM.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable soldering and robust bonding during assembly.

Length: 6 mm

The length of 6mm offers a compact form factor for the MRAM, making it suitable for use in small devices and systems.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures the MRAM can withstand harsh environmental conditions and operate reliably in demanding settings.

Technology: CMOS

The CMOS technology used in the MRAM provides fast and efficient performance, making it a high-speed memory solution.

Terminal Form: NO LEAD

The no-lead terminal form is environmentally friendly and offers reliable connectivity for the MRAM.

No. of Words: 524288 words

The MRAM with 524,288 words provides ample storage capacity for data-intensive applications.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and retrieval, enhancing the overall performance of the MRAM.

Terminal Pitch: 1.27 mm

The terminal pitch of 1.27mm offers compatibility with standard connectors and facilitates easy installation of the MRAM.

No. of Words Code: 512K

The 512K words code ensures precise addressing and efficient data storage for the MRAM.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level of 3 indicates the MRAM's ability to withstand exposure to humidity and moisture, ensuring long-term reliability.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V provides a safe operating range for the MRAM, preventing damage from voltage spikes.

Memory Density: 4194304 bit

The memory density of 4,194,304 bits offers ample storage capacity for storing data-intensive applications.

Memory IC Type: MRAM

The MRAM technology used in the memory IC provides fast read and write speeds, making it a reliable and high-performance memory solution.

Technical Specifications

MRAMs MR25H40CDFR attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H40CDFR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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