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MR25H40CDF

Everspin Technologies

MR25H40CDF by Everspin Technologies

MR25H40CDF by Everspin Technologies is a 512KX8 MRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous mode, small outline package, and CMOS technology. Ideal for industrial applications requiring fast non-volatile memory with low power consumption.

Median Price

$19.400

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Mouser Electronics

USA . 1,486 parts In-Stock

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$25.340

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$21.630

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$20.910

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Arrow

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$19.400

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Nova Conductors

Japan . 50 parts In-Stock

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$16.960

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Chip Stock

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Cyclops Electronics Ltd

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NexGen Digital

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NAC Semi

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$21.520

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Prism Electronics

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Sensible Micro Corp

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$2.504

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$2.379

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Continental Prestige Electronics

USA . 5,614 parts In-Stock

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S.R.D Solutions

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Argo Parts USA

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iodParts Technologies Inc.

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Overview

Unlock the power of cutting-edge memory technology with the MR25H40CDF by Everspin Technologies. As a leader in MRAMs, Everspin delivers a product that combines reliability, speed, and efficiency in one compact package. Ideal for industrial applications, this MRAM offers high performance in extreme temperatures, providing peace of mind for your critical systems. Say goodbye to data loss and hello to seamless operation with the MR25H40CDF. Experience the difference that Everspin can make for your business today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Using plastic/epoxy as the package body material ensures durability and protection for the MRAM, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, optimizing space and overall design.

Operating Mode: SYNCHRONOUS

The synchronous operating mode offers precise and synchronized data transfers, enhancing system performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures compatibility with common power sources, simplifying integration and operation.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this MRAM can withstand high-temperature environments, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high speed, making this MRAM energy-efficient and fast in data access.

Memory IC Type: MRAM

Being an MRAM (Magnetic Random Access Memory) device provides non-volatile storage, fast read/write speeds, and high endurance, making it a reliable and efficient memory solution.

Technical Specifications

MRAMs MR25H40CDF attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H40CDF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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