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MR25H40CDC

Everspin Technologies

MR25H40CDC by Everspin Technologies

Everspin Technologies' MR25H40CDC is a 512Kx8 MRAM with 3.3V supply, operating at -40 to 85°C. It features synchronous operation, small outline package, and industrial temperature grade. Ideal for applications requiring fast non-volatile memory with high endurance and reliability in harsh environments.

Median Price

$27.620

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 4,630 parts In-Stock

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$27.620

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$23.560

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$22.778

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Future Electronics

Canada . 2,292 parts In-Stock

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$15.400

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Verical

USA . 777 parts In-Stock

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$35.343

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Avnet

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Nova Conductors

Japan . 300 parts In-Stock

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$37.692

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Chip Stock

USA . 4,300 parts In-Stock

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IBS Electronics

USA . 2,292 parts In-Stock

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$21.599

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Vyrian

USA . 1,960 parts In-Stock

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NAC Semi

USA . 1,140 parts In-Stock

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$32.100

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$29.180

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ComSIT Distribution GmbH

Germany . 2 parts In-Stock

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Bristol Electronics

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Continental Prestige Electronics

USA . 4,711 parts In-Stock

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$37.692

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$36.938

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Netroflash

USA . 100 parts In-Stock

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$37.692

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$35.807

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$35.054

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Argo Parts USA

USA . 4,116 parts In-Stock

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S.R.D Solutions

India . 1,920 parts In-Stock

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Kepictronics

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iodParts Technologies Inc.

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Perfect Parts

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Overview

Revolutionize your data storage with Everspin Technologies' MR25H40CDC MRAM. Boasting unparalleled quality and reliability, this MRAM offers lightning-fast speeds and low power consumption, making it ideal for a wide range of applications. From industrial automation to automotive systems, this innovative memory solution delivers unmatched performance and endurance. Upgrade your technology today with Everspin's cutting-edge MRAM technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are known for their durability and resistance to moisture, making this product reliable for various operating conditions.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination of data transfer, resulting in efficient performance.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of systems while providing energy efficiency.

Technology: CMOS

CMOS technology offers low power consumption and high speed, enhancing the overall efficiency of the memory IC.

Memory Density: 4194304 bit

With a high memory density of 4,194,304 bits, this MRAM offers ample storage capacity for demanding applications.

Technical Specifications

MRAMs MR25H40CDC attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.05 mm

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

MR25H40CDC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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