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MR5A16ACMA35

Everspin Technologies

MR5A16ACMA35 by Everspin Technologies

MR5A16ACMA35 by Everspin Technologies is a 2MX16 MRAM with 3V supply voltage, operating at -40 to 85 °C. It features a low profile grid array package, 0.75mm terminal pitch, and 33554432 bit memory density. Ideal for applications requiring fast access time and high data retention in a compact form factor.

Median Price

$96.100

Lifecycle Status

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5

In-Stock Inventory

1k+

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Mouser Electronics

USA . 403 parts In-Stock

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$95.960

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$83.450

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DigiKey

USA . 371 parts In-Stock

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$96.240

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$83.710

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371

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Distributors (In-Stock)

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Nova Conductors

Japan . 88 parts In-Stock

1+ parts

$67.860

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88

$67.860

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Chip Stock

USA . 605 parts In-Stock

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605

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Vyrian

USA . 290 parts In-Stock

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290

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Continental Prestige Electronics

USA . 3,036 parts In-Stock

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$67.860

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$66.503

3,036

$67.860

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$66.503

Netroflash

USA . 2,000 parts In-Stock

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$67.860

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$67.860

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Argo Parts USA

USA . 2,521 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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Overview

Everspin Technologies presents the MR5A16ACMA35, a cutting-edge MRAM offering unparalleled speed and reliability. With a package style designed for efficiency and a wide operating temperature range, this memory device is perfect for applications requiring fast data access and low power consumption. Experience the benefits of Everspin's advanced technology with the MR5A16ACMA35, providing customers with a superior solution for their memory needs. Upgrade your system with the quality and performance of Everspin's MRAMs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components, making it suitable for various environments.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Enables independent operation of memory cells, enhancing performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Offers a stable and standard voltage level for reliable operation.

Technology: CMOS

Utilizes low power consumption and offers high-speed operation, making it energy-efficient.

Maximum Access Time: 35 ns

Provides fast access to data, enhancing overall system performance.

Technical Specifications

MRAMs MR5A16ACMA35 attributes and parameters. Explore more MRAMs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

Minimum Data Retention Time:

20

JESD-30 Code:

S-PBGA-B48

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.018 Amp

Minimum Standby Voltage:

3 V

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

10 mm

Maximum Write Cycle Time (tWC):

.000035 ms

Trade Compliance

MR5A16ACMA35 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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